Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

    公开(公告)号:US20210225890A1

    公开(公告)日:2021-07-22

    申请号:US17224305

    申请日:2021-04-07

    申请人: Apple Inc.

    摘要: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors
    2.
    发明授权
    Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors 有权
    用半导体氧化物薄膜晶体管显示液晶显示器的驱动电路

    公开(公告)号:US09412799B2

    公开(公告)日:2016-08-09

    申请号:US14228098

    申请日:2014-03-27

    申请人: Apple Inc.

    摘要: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    摘要翻译: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中,可以形成包括半导体氧化物薄膜晶体管,硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中,显示驱动器电路可以包括硅薄膜晶体管电路,显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

    Gate insulator uniformity
    3.
    发明授权
    Gate insulator uniformity 有权
    栅极绝缘体均匀性

    公开(公告)号:US09048256B2

    公开(公告)日:2015-06-02

    申请号:US13679767

    申请日:2012-11-16

    申请人: APPLE INC.

    摘要: Embodiments of the present disclosure relate to display devices and methods for manufacturing display devices. Specifically, embodiments of the present disclosure employ an enhanced etching process to create uniformity in the gate insulator of thin-film-transistor (TFTs) by using an active layer to protect the gate insulator from inadvertent etching while patterning an etch stop layer.

    摘要翻译: 本公开的实施例涉及用于制造显示设备的显示设备和方法。 具体地,本公开的实施例采用增强的蚀刻工艺,以通过使用有源层来在薄膜晶体管(TFT)的栅极绝缘体中产生均匀性,以保护栅极绝缘体免受无意蚀刻,同时图案化蚀刻停止层。

    Protection layer for halftone process of third metal
    4.
    发明授权
    Protection layer for halftone process of third metal 有权
    第三金属半色调处理保护层

    公开(公告)号:US08999771B2

    公开(公告)日:2015-04-07

    申请号:US13631385

    申请日:2012-09-28

    申请人: Apple Inc.

    摘要: A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.

    摘要翻译: 一种具有用于平坦化层的保护层的薄膜晶体管。 保护层防止灰化过程中平坦化层的减少,从而防止形成通过平坦化层的急剧变细的通孔。 以这种方式,通孔可以涂覆有可以用作公共电极和晶体管的漏极之间的导电路径的导电元件。

    Back Channel Etching Oxide Thin Film Transistor Process Architecture
    5.
    发明申请
    Back Channel Etching Oxide Thin Film Transistor Process Architecture 审中-公开
    背沟道蚀刻氧化物薄膜晶体管工艺架构

    公开(公告)号:US20140120657A1

    公开(公告)日:2014-05-01

    申请号:US13664240

    申请日:2012-10-30

    申请人: APPLE INC.

    IPC分类号: H01L21/36

    摘要: A method is provided for fabricating a back channel etching (BCE) oxide thin film transistor (TFT) for a liquid crystal display. The method includes forming a first metal layer having a first portion and a second portion over a substrate, depositing a gate insulator over the first metal layer, and disposing a semiconductor layer over the gate insulator. The method also includes depositing a half-tone photoresist to cover a first portion of the semiconductor layer and the first portion of the first metal layer. The half-tone photoresist has a first portion and a second portion thicker than the first portion. The first portion has a via hole above the second portion of the first metal layer. The second portion of the half-tone photoresist covers the first portion of the first metal layer. The method further includes etching a portion of the gate insulator through the via hole such that the second portion of the first metal layer is exposed, removing the first portion of the half-tone photoresist while remaining the second portion of the half-tone photoresist, and etching to remove a second portion of the semiconductor layer that is not covered by the half-tone photoresist.

    摘要翻译: 提供了一种用于制造用于液晶显示器的背沟道蚀刻(BCE)氧化物薄膜晶体管(TFT)的方法。 该方法包括在衬底上形成具有第一部分和第二部分的第一金属层,在第一金属层上沉积栅极绝缘体,以及在栅极绝缘体上方设置半导体层。 该方法还包括沉积半色调光致抗蚀剂以覆盖半导体层的第一部分和第一金属层的第一部分。 半色调光致抗蚀剂具有比第一部分厚的第一部分和第二部分。 第一部分在第一金属层的第二部分上方具有通孔。 半色调光刻胶的第二部分覆盖第一金属层的第一部分。 该方法还包括通过通孔蚀刻栅极绝缘体的一部分,使第一金属层的第二部分露出,除去半色调光致抗蚀剂的第一部分,同时保留半色调光致抗蚀剂的第二部分, 并且蚀刻以除去未被半色调光致抗蚀剂覆盖的半导体层的第二部分。

    Protection Layer for Halftone Process of Third Metal
    6.
    发明申请
    Protection Layer for Halftone Process of Third Metal 有权
    第三金属半色调工艺保护层

    公开(公告)号:US20140091390A1

    公开(公告)日:2014-04-03

    申请号:US13631385

    申请日:2012-09-28

    申请人: APPLE INC.

    IPC分类号: H01L29/786 H01L21/768

    摘要: A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.

    摘要翻译: 一种具有用于平坦化层的保护层的薄膜晶体管。 保护层防止灰化过程中平坦化层的减少,从而防止形成通过平坦化层的急剧变细的通孔。 以这种方式,通孔可以涂覆有可以用作公共电极和晶体管的漏极之间的导电路径的导电元件。

    Flipped panel displays with black column spacers
    7.
    发明授权
    Flipped panel displays with black column spacers 有权
    带黑色柱状垫片的翻转面板显示屏

    公开(公告)号:US09588371B2

    公开(公告)日:2017-03-07

    申请号:US14497252

    申请日:2014-09-25

    申请人: Apple Inc.

    摘要: A liquid crystal display may have a thin-film transistor layer with an array of pixel electrode structures for applying electric fields to a liquid crystal layer. The liquid crystal display may also have a color filter layer with an array of color filter elements. The color filter elements may allow the display to display color images. The color filter layer may be interposed between the thin-film transistor layer and a backlight. The liquid crystal layer may be sandwiched between the thin-film transistor layer and the color filter layer. The color filter layer may have a transparent substrate on which the color filter elements are formed. Black masking structures may be formed on a transparent overcoat layer that covers the color filter elements. Black column spacers may be formed from the same layer of material that forms the black masking structures.

    摘要翻译: 液晶显示器可以具有薄膜晶体管层,其具有用于向液晶层施加电场的像素电极结构的阵列。 液晶显示器还可以具有带有滤色器元件阵列的滤色器层。 滤色器元件可以允许显示器显示彩色图像。 滤色器层可以介于薄膜晶体管层和背光源之间。 液晶层可以夹在薄膜晶体管层和滤色器层之间。 滤色器层可以具有形成滤色器元件的透明基板。 可以在覆盖滤色器元件的透明外涂层上形成黑色掩蔽结构。 黑色柱状间隔物可以由形成黑色掩蔽结构的相同材料层形成。

    Displays with radio-frequency identifiers
    8.
    发明授权
    Displays with radio-frequency identifiers 有权
    用射频标识符显示

    公开(公告)号:US09466018B2

    公开(公告)日:2016-10-11

    申请号:US14699417

    申请日:2015-04-29

    申请人: Apple Inc.

    摘要: A display may have an active area surrounded by an inactive border area. The display may be a liquid crystal display having a liquid crystal layer sandwiched between a color filter layer and a thin-film transistor layer. An upper polarizer may have a polarized central region that overlaps the active area of the display. The upper polarizer may also have an unpolarized portion in the inactive border area overlapping the border structures. The border structures may include colored material such as a white layer on the inner surface of the thin-film transistor layer. Binary information may be embedded into an array of programmable resonant circuits. The binary information may be a display identifier or other information associated with a display. The programmable resonant circuits may be tank circuits with adjustable capacitors, fuses, or other programmable components.

    摘要翻译: 显示器可以具有被非活动边界区域包围的活动区域。 显示器可以是具有夹在滤色器层和薄膜晶体管层之间的液晶层的液晶显示器。 上偏振器可以具有与显示器的有效区域重叠的偏振中心区域。 上偏振器还可以在非边界区域中具有与边界结构重叠的非偏振部分。 边界结构可以在薄膜晶体管层的内表面上包括诸如白色层的着色材料。 二进制信息可嵌入到可编程谐振电路阵列中。 二进制信息可以是与显示器相关联的显示标识符或其他信息。 可编程谐振电路可以是具有可调电容器,保险丝或其他可编程元件的储能电路。

    Liquid Crystal Displays With Minimized Transmission Loss and Enhanced Off-Axis Color Fidelity
    9.
    发明申请
    Liquid Crystal Displays With Minimized Transmission Loss and Enhanced Off-Axis Color Fidelity 有权
    具有最小化传输损耗和增强的离轴色彩保真度的液晶显示器

    公开(公告)号:US20160209691A1

    公开(公告)日:2016-07-21

    申请号:US14850006

    申请日:2015-09-10

    申请人: Apple Inc.

    摘要: A display may have upper and lower display layers. A layer of liquid crystal material may be interposed between the upper and lower display layers. The display layers may have substrates. The display layers may include a color filter layer having an array of color filter elements on a glass substrate and a thin-film transistor layer having a layer of thin-film transistor circuitry on a glass substrate. Dielectric layers within the display layers such as dielectric layers within the thin-film transistor layer may have differing indices of refraction. Reflections and color shifts due to index of refraction discontinuities may be minimized by interposing graded index dielectric layers between adjacent layers with different indices. The graded index layers may be formed from structures with a continuously varying index of refraction or structures with a step-wise varying index of refraction.

    摘要翻译: 显示器可以具有上和下显示层。 可以在上显示层和下显示层之间插入一层液晶材料。 显示层可以具有基底。 显示层可以包括在玻璃基板上具有滤色器元件阵列的滤色器层和在玻璃基板上具有薄膜晶体管电路层的薄膜晶体管层。 诸如薄膜晶体管层内的介电层的显示层内的电介质层可以具有不同的折射率。 由于折射不连续指数引起的反射和颜色偏移可以通过在不同指数的相邻层之间插入渐变折射率介电层来最小化。 渐变折射率层可以由具有连续变化的折射率的结构或具有逐步变化的折射率的结构形成。

    Liquid Crystal Displays with Oxide-Based Thin-Film Transistors
    10.
    发明申请
    Liquid Crystal Displays with Oxide-Based Thin-Film Transistors 有权
    具有氧化物薄膜晶体管的液晶显示器

    公开(公告)号:US20150055047A1

    公开(公告)日:2015-02-26

    申请号:US14228070

    申请日:2014-03-27

    申请人: Apple Inc.

    IPC分类号: G02F1/1368

    摘要: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    摘要翻译: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中,可以形成包括半导体氧化物薄膜晶体管,硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中,显示驱动器电路可以包括硅薄膜晶体管电路,显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。