Invention Grant
US09071039B2 Optical device structure using GaN substrates for laser applications
有权
用于激光应用的GaN衬底的光学器件结构
- Patent Title: Optical device structure using GaN substrates for laser applications
- Patent Title (中): 用于激光应用的GaN衬底的光学器件结构
-
Application No.: US14134244Application Date: 2013-12-19
-
Publication No.: US09071039B2Publication Date: 2015-06-30
- Inventor: James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz Elsass , Yu-Chia Chang
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/22 ; H01S5/02 ; H01S5/343 ; B82Y20/00 ; H01L21/02 ; H01S5/028 ; H01S5/20 ; H01S5/32

Abstract:
An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
Public/Granted literature
- US20140295595A1 OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS Public/Granted day:2014-10-02
Information query