OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
    4.
    发明申请
    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS 有权
    使用GaN衬底激光应用的光学器件结构

    公开(公告)号:US20140295595A1

    公开(公告)日:2014-10-02

    申请号:US14134244

    申请日:2013-12-19

    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

    Abstract translation: 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件,其特征在于朝向(000-1)约为-1度且朝向(11-20)小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中,激光条纹区域的特征在于基本上平行于c方向的空腔取向,激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。

    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
    5.
    发明申请
    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS 有权
    使用GaN衬底激光应用的光学器件结构

    公开(公告)号:US20160006217A1

    公开(公告)日:2016-01-07

    申请号:US14736939

    申请日:2015-06-11

    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

    Abstract translation: 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件,其特征在于朝向(000-1)约为-1度且朝向(11-20)小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中,激光条纹区域的特征在于基本上平行于c方向的空腔取向,激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。

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