发明授权
US09075306B2 Chemically amplified negative resist composition and patterning process
有权
化学放大负光刻胶组合物和图案化工艺
- 专利标题： Chemically amplified negative resist composition and patterning process
- 专利标题（中）： 化学放大负光刻胶组合物和图案化工艺
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申请号： US13074680申请日： 2011-03-29
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公开(公告)号： US09075306B2公开(公告)日： 2015-07-07
- 发明人: Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
- 申请人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-087243 20070329
- 主分类号： G03F7/038
- IPC分类号： G03F7/038 ; G03F7/20
摘要：
A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
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