-
1.发明授权公开(公告)号：US09075306B2
公开(公告)日：2015-07-07
申请号：US13074680
申请日：2011-03-29
申请人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
发明人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
CPC分类号： G03F7/0382 , G03F7/20
摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
摘要翻译： 化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。 在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥形成最小化。
-
2.发明申请公开(公告)号：US20110177464A1
公开(公告)日：2011-07-21
申请号：US13074680
申请日：2011-03-29
申请人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
发明人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
IPC分类号： G03F7/20
CPC分类号： G03F7/0382 , G03F7/20
摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
摘要翻译： 化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。 在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥接形成最小化。
-
公开(公告)号：US07501223B2
公开(公告)日：2009-03-10
申请号：US11902760
申请日：2007-09-25
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
CPC分类号： G03F7/0397 , Y10S430/106
摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.
摘要翻译： 公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。 可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性 抵抗性。
-
4.发明申请公开(公告)号：US20080090179A1
公开(公告)日：2008-04-17
申请号：US11902760
申请日：2007-09-25
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
CPC分类号： G03F7/0397 , Y10S430/106
摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.
摘要翻译： 公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。 可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性 抵抗性。
-
公开(公告)号：US08367295B2
公开(公告)日：2013-02-05
申请号：US12110651
申请日：2008-04-28
申请人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
发明人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
IPC分类号： G03F7/004
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.
摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。
-
公开(公告)号：US20080274422A1
公开(公告)日：2008-11-06
申请号：US12110651
申请日：2008-04-28
申请人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
发明人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
IPC分类号： G03F7/004
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.
摘要翻译： 提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。 本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于 将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。
-
公开(公告)号：US07977027B2
公开(公告)日：2011-07-12
申请号：US11876298
申请日：2007-10-22
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Youichi Ohsawa , Ryuji Koitabashi , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Youichi Ohsawa , Ryuji Koitabashi , Tamotsu Watanabe
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.
摘要翻译： 化学放大正型抗蚀剂组合物包含具有胺氧化物结构作为碱性组分的化合物，基础树脂，光酸产生剂和有机溶剂。 抗蚀剂组合物显示高分辨率，显着地防止显影后线图案塌陷，并且具有改善的耐蚀刻性。
-
公开(公告)号：US20070111139A1
公开(公告)日：2007-05-17
申请号：US11560137
申请日：2006-11-15
IPC分类号： G03C1/00
CPC分类号： G03F7/0382
摘要： A negative resist composition is provided comprising a polymer comprising recurring units having formula (1), an organic solvent, a crosslinker, and an optional photoacid generator. In formula (1), R1 and R2 are hydrogen or methyl, m is 0 or a positive integer of 1 to 5, p and q are positive numbers. The composition has a high contrast of alkali dissolution rate before and after exposure, high resolution and good etching resistance.
摘要翻译： 提供了包含含有式（1）的重复单元，有机溶剂，交联剂和任选的光酸产生剂的聚合物的负性抗蚀剂组合物。 在式（1）中，R 1和R 2均为氢或甲基，m为0或1至5的正整数，p和q为正数。 该组合物在曝光前后具有高的对比度的碱溶解速率，高分辨率和良好的抗蚀刻性。
-
公开(公告)号：US06861198B2
公开(公告)日：2005-03-01
申请号：US10351097
申请日：2003-01-23
IPC分类号： C08F12/22 , C08F20/12 , C08F32/08 , G03F7/004 , G03F7/033 , G03F7/038 , H01L21/027 , G03C1/72 , C03F7/033
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/143
摘要： A negative resist material, which comprises at least a high polymer containing repeating units represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. There is provided a negative resist material, in particular, a negative resist material of chemical amplification type, which shows high sensitivity, resolution, exposure latitude and process adaptability as well as good pattern shape after light exposure, and further shows superior etching resistance.
摘要翻译： 一种负型抗蚀剂材料，其至少包含含有由以下通式（1）表示的重均单元和重均分子量为1,000至500,000的高聚合物。 提供了负的抗蚀剂材料，特别是具有化学放大型的负型抗蚀剂材料，其在曝光后显示出高灵敏度，分辨率，曝光宽容度和工艺适应性以及良好的图案形状，并且还显示出优异的耐蚀刻性。
-
公开(公告)号：US20070148584A1
公开(公告)日：2007-06-28
申请号：US10852157
申请日：2004-05-25
申请人： Takanobu Takeda , Osamu Watanabe , Daisuke Manba
发明人： Takanobu Takeda , Osamu Watanabe , Daisuke Manba
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/0397
摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.
摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。
-
-
-
-
-
-
-
-
-
搜索结果
308 条记录 (耗时 0.029 秒)
