发明授权
- 专利标题: Thin film transistor array panel and method of manufacturing the same
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US13875722申请日: 2013-05-02
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公开(公告)号: US09076691B2公开(公告)日: 2015-07-07
- 发明人: Shin Il Choi , Sang Gab Kim , Su Bin Bae , Yu-Gwang Jeong
- 申请人: Samsung Display Co., Ltd.
- 申请人地址: KR
- 专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2012-0155107 20121227
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/12 ; H01L27/32
摘要:
A method of manufacturing a thin film transistor array panel includes: a gate insulating layer disposed on a gate electrode, a semiconductor disposed on the gate insulating layer, a source electrode opposite a drain electrode disposed on the semiconductor, a color filter disposed on the gate insulating layer, an overcoat disposed on the color filter and including an inorganic material. A first dry etching is performed using the photosensitive film pattern as a mask to etch the overcoat and provide a preliminary contact hole, through which a portion of the color filter is exposed. A second dry etching is performed using the overcoat as a mask to etch the color filter through the preliminary contact hole and to provide a contact hole, through which a portion of the drain electrode is exposed. A pixel electrode is connected to the drain electrode through the contact hole, on the overcoat.
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