发明授权
- 专利标题: Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods
- 专利标题(中): 具有自热结构的半导体器件,其制造方法和测试方法
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申请号: US13221594申请日: 2011-08-30
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公开(公告)号: US09076751B2公开(公告)日: 2015-07-07
- 发明人: Jia Yang Ko , Ying-Han Chiou , Ling-Sung Wang
- 申请人: Jia Yang Ko , Ying-Han Chiou , Ling-Sung Wang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: G01R31/10
- IPC分类号: G01R31/10 ; H01L23/34 ; G01R31/28 ; H01L21/66
摘要:
Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods are disclosed. In one embodiment, a semiconductor device includes a workpiece, an active electrical structure disposed over the workpiece, and at least one self-heating structure disposed proximate the active electrical structure. The active electrical structure may include a capacitor, a resistor, a conductive line, a segment of a conductive line, a transistor, or a combination thereof.
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