公开(公告)号：US08659089B2

公开(公告)日：2014-02-25

申请号：US13267648

申请日：2011-10-06

申请人： Jia-Yang Ko ,  Ching-Chien Huang ,  Ying-Han Chiou ,  Ling-Sung Wang

发明人： Jia-Yang Ko ,  Ching-Chien Huang ,  Ying-Han Chiou ,  Ling-Sung Wang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0653 ,  H01L29/66628 ,  H01L29/66636

摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. In an example, the method includes providing a substrate; forming a gate structure over the substrate; removing portions of the substrate to form a first recess and a second recess in the substrate, such that the gate structure interposes the first recess and the second recess; forming a nitrogen passivation layer in the substrate, such that the first recess and the second recess are defined by nitrogen passivated surfaces of the substrate; and forming doped source and drain features over the nitrogen passivated surfaces of the first recess and the second recess, the doped source and drain features filling the first and second recesses.

摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 在一个实例中，该方法包括提供基底; 在衬底上形成栅极结构; 去除所述衬底的部分以在所述衬底中形成第一凹部和第二凹部，使得所述栅极结构将所述第一凹部和所述第二凹部中间; 在所述基板中形成氮钝化层，使得所述第一凹部和所述第二凹部由所述基板的氮钝化表面限定; 以及在所述第一凹部和所述第二凹部的氮钝化表面上形成掺杂源极和漏极特征，所述掺杂源极和漏极特征填充所述第一和第二凹部。

公开(公告)号：US20130087857A1

公开(公告)日：2013-04-11

申请号：US13267648

申请日：2011-10-06

申请人： Jia-Yang Ko ,  Ching-Chien Huang ,  Ying-Han Chiou ,  Ling-Sung Wang

发明人： Jia-Yang Ko ,  Ching-Chien Huang ,  Ying-Han Chiou ,  Ling-Sung Wang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0653 ,  H01L29/66628 ,  H01L29/66636

摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. In an example, the method includes providing a substrate; forming a gate structure over the substrate; removing portions of the substrate to form a first recess and a second recess in the substrate, such that the gate structure interposes the first recess and the second recess; forming a nitrogen passivation layer in the substrate, such that the first recess and the second recess are defined by nitrogen passivated surfaces of the substrate; and forming doped source and drain features over the nitrogen passivated surfaces of the first recess and the second recess, the doped source and drain features filling the first and second recesses.

摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 在一个实例中，该方法包括提供基底; 在衬底上形成栅极结构; 去除所述衬底的部分以在所述衬底中形成第一凹部和第二凹部，使得所述栅极结构将所述第一凹部和所述第二凹部中间; 在所述基板中形成氮钝化层，使得所述第一凹部和所述第二凹部由所述基板的氮钝化表面限定; 以及在所述第一凹部和所述第二凹部的氮钝化表面上形成掺杂源极和漏极特征，所述掺杂源极和漏极特征填充所述第一和第二凹部。

公开(公告)号：US09076751B2

公开(公告)日：2015-07-07

申请号：US13221594

申请日：2011-08-30

申请人： Jia Yang Ko ,  Ying-Han Chiou ,  Ling-Sung Wang

发明人： Jia Yang Ko ,  Ying-Han Chiou ,  Ling-Sung Wang

IPC分类号： G01R31/10 ,  H01L23/34 ,  G01R31/28 ,  H01L21/66

CPC分类号： H01L23/345 ,  G01R31/2875 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods are disclosed. In one embodiment, a semiconductor device includes a workpiece, an active electrical structure disposed over the workpiece, and at least one self-heating structure disposed proximate the active electrical structure. The active electrical structure may include a capacitor, a resistor, a conductive line, a segment of a conductive line, a transistor, or a combination thereof.

摘要翻译： 公开了具有自热结构的半导体器件，其制造方法和测试方法。 在一个实施例中，半导体器件包括工件，设置在工件上方的有源电气结构以及靠近有源电气结构设置的至少一个自热结构。 有源电结构可以包括电容器，电阻器，导电线，导电线段，晶体管或其组合。

公开(公告)号：US20130049781A1

公开(公告)日：2013-02-28

申请号：US13221594

申请日：2011-08-30

申请人： Jia Yang Ko ,  Ying-Han Chiou ,  Ling-Sung Wang

发明人： Jia Yang Ko ,  Ying-Han Chiou ,  Ling-Sung Wang

IPC分类号： G01R31/10 ,  H01L21/768 ,  G06F19/00 ,  H01L23/522

CPC分类号： H01L23/345 ,  G01R31/2875 ,  G01R31/2884 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods are disclosed. In one embodiment, a semiconductor device includes a workpiece, an active electrical structure disposed over the workpiece, and at least one self-heating structure disposed proximate the active electrical structure.

摘要翻译： 公开了具有自热结构的半导体器件，其制造方法和测试方法。 在一个实施例中，半导体器件包括工件，设置在工件上方的有源电气结构以及靠近有源电气结构设置的至少一个自热结构。