发明授权
- 专利标题: Scaling of bipolar transistors
- 专利标题(中): 双极晶体管的缩放
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申请号: US14508011申请日: 2014-10-07
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公开(公告)号: US09076810B2公开(公告)日: 2015-07-07
- 发明人: Alvin J. Joseph , Ramana M. Malladi , James A. Slinkman
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Anthony J. Canale
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L29/66 ; G06F17/50 ; H01L21/8249 ; H01L29/732 ; H01L21/762 ; H01L21/02 ; H01L21/311 ; H01L27/02
摘要:
Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.
公开/授权文献
- US20150024570A1 SCALING OF BIPOLAR TRANSISTORS 公开/授权日:2015-01-22
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