Invention Grant
- Patent Title: Power semiconductor device and method of manufacturing the same
- Patent Title (中): 功率半导体器件及其制造方法
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Application No.: US14149578Application Date: 2014-01-07
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Publication No.: US09076811B2Publication Date: 2015-07-07
- Inventor: In Hyuk Song , Jae Hoon Park , Dong Soo Seo
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: Ladas & Parry, LLP
- Priority: KR10-2012-0095649 20120830
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/739 ; H01L21/265 ; H01L29/36 ; H01L21/22
Abstract:
Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.
Public/Granted literature
- US20140117407A1 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-05-01
Information query
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