公开(公告)号：US09318589B2

公开(公告)日：2016-04-19

申请号：US13751916

申请日：2013-01-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jaehoon Park ,  Chang Su Jang ,  In Hyuk Song ,  Kee Ju Um ,  Dong Soo Seo

IPC: H01L29/739 ,  H01L29/10

CPC classification number: H01L29/7397 ,  H01L29/1095

Abstract: There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area.

Abstract translation: 提供了一种绝缘栅双极晶体管，包括：第一导电类型的第一半导体区域; 形成在第一半导体区域的一个表面上的第二导电类型的第二半导体区域; 在第二半导体区域的一个表面上沿长度方向连续形成的第一导电类型的第三半导体区域; 多个沟槽，形成在第三半导体区域之间，延伸到第二半导体区域的内部，并且在长度方向上是连续的; 形成在第三半导体区域的一个表面上的第二导电类型的第四半导体区域，形成在沟槽内的绝缘层; 掩埋在绝缘层内的栅电极; 以及形成在与所述第二半导体区域内的所述第三半导体区域对应的位置中的至少一个的阻挡层。

公开(公告)号：US09252212B2

公开(公告)日：2016-02-02

申请号：US14243873

申请日：2014-04-02

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jae Hoon Park ,  Ji Hye Kim ,  Kyu Hyun Mo ,  Dong Soo Seo ,  In Hyuk Song

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/739 ,  H01L29/10

CPC classification number: H01L29/063 ,  H01L29/1095 ,  H01L29/7397

Abstract: A power semiconductor device may include: an active region in which a current flows through a channel formed when the device being turned on; a termination region disposed around the active region; a first semiconductor region of a first conductive type disposed in the termination region in a direction from the active region to the termination region; and a second semiconductor region of a second conductive type disposed in the termination region in the direction from the active region to the termination region, the first semiconductor region and the second semiconductor region being disposed alternately.

Abstract translation: 功率半导体器件可以包括：有源区域，其中电流流过当器件导通时形成的沟道; 设置在所述有源区域周围的端接区域; 第一导电类型的第一半导体区域，设置在从所述有源区域到所述端接区域的方向上的所述端接区域中; 以及第二导电类型的第二半导体区域，其设置在从所述有源区域到所述端接区域的方向上的所述端接区域中，所述第一半导体区域和所述第二半导体区域交替布置。

公开(公告)号：US09076811B2

公开(公告)日：2015-07-07

申请号：US14149578

申请日：2014-01-07

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Hyuk Song ,  Jae Hoon Park ,  Dong Soo Seo

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/739 ,  H01L21/265 ,  H01L29/36 ,  H01L21/22

CPC classification number: H01L29/6634 ,  H01L21/046 ,  H01L21/22 ,  H01L21/2253 ,  H01L21/265 ,  H01L21/3081 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7825

Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

Abstract translation: 本发明公开了一种功率半导体器件，包括：具有一个表面和另一个表面并由第一导电型漂移层形成的基底基板; 形成在所述基底基板的一个表面上并且具有比所述第一导电型漂移层的浓度高的浓度的第一导电型扩散层; 以及形成为从厚度方向包括第二导电类型阱层的基底基板的一个表面穿过第二导电类型阱层和第一导电型扩散层的沟槽。

公开(公告)号：US20150187678A1

公开(公告)日：2015-07-02

申请号：US14270894

申请日：2014-05-06

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jae Hoon PARK ,  Sun Jae Yoon ,  Chang Su Jang ,  Kee Ju Um ,  In Hyuk Song

IPC: H01L23/373

CPC classification number: H01L23/367 ,  H01L29/0834 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A power semiconductor device may include: a first conductivity-type first semiconductor layer; a second conductivity-type second semiconductor layer disposed above the first semiconductor layer; and a heat dissipation trench disposed to penetrate from an upper surface of the second semiconductor layer into a portion of the second semiconductor layer and having an insulating layer disposed on a surface thereof.

Abstract translation: 功率半导体器件可以包括：第一导电型第一半导体层; 设置在所述第一半导体层上方的第二导电型第二半导体层; 以及散热沟，其设置成从所述第二半导体层的上表面穿透到所述第二半导体层的一部分中，并且具有设置在其表面上的绝缘层。

公开(公告)号：US20140117407A1

公开(公告)日：2014-05-01

申请号：US14149578

申请日：2014-01-07

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Hyuk Song ,  Jae Hoon Park ,  Dong Soo Seo

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/739

CPC classification number: H01L29/6634 ,  H01L21/046 ,  H01L21/22 ,  H01L21/2253 ,  H01L21/265 ,  H01L21/3081 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7825

Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

Abstract translation: 本发明公开了一种功率半导体器件，包括：具有一个表面和另一个表面并由第一导电型漂移层形成的基底基板; 形成在所述基底基板的一个表面上并且具有比所述第一导电型漂移层的浓度高的浓度的第一导电型扩散层; 以及形成为从厚度方向包括第二导电类型阱层的基底基板的一个表面穿过第二导电型阱层和第一导电型扩散层的沟槽。

公开(公告)号：US20140061717A1

公开(公告)日：2014-03-06

申请号：US13688320

申请日：2012-11-29

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Hyuk Song ,  Jae Hoon Park ,  Dong Soo Seo

IPC: H01L29/739 ,  H01L29/66

CPC classification number: H01L29/6634 ,  H01L21/046 ,  H01L21/22 ,  H01L21/2253 ,  H01L21/265 ,  H01L21/3081 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7825

Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

公开(公告)号：US09356116B2

公开(公告)日：2016-05-31

申请号：US13890680

申请日：2013-05-09

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jaehoon Park ,  In Hyuk Song ,  Dong Soo Seo ,  Kwang Soo Kim ,  Kee Ju Um

IPC: H01L29/66 ,  H01L29/739 ,  H01L27/088 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/768 ,  H01L29/78 ,  H01L51/05 ,  H01L27/08 ,  H01L27/092 ,  H01L31/111

CPC classification number: H01L29/66348 ,  H01L27/0817 ,  H01L27/088 ,  H01L27/0921 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/41733 ,  H01L29/4232 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66477 ,  H01L29/66484 ,  H01L29/66954 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/768 ,  H01L29/78 ,  H01L31/111 ,  H01L31/1113 ,  H01L51/0512

Abstract: There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer.

Abstract translation: 提供了一种功率半导体器件，包括第一导电型漂移层; 形成在漂移层上的第二导电型体层，形成在漂移层下面的第二导电型集电极层; 通过贯穿本体层和漂移层的一部分而形成的第一栅极，形成在主体层中并形成为与第一栅极间隔开的第一导电型发射极层，覆盖主体层的上部的第二栅极 和发射极层，并且在第一栅极上形成为平面型栅极，以及在第一和第二栅极的接触表面之间形成的偏析阻挡层，其具有主体层，发射极层和漂移层。

公开(公告)号：US09196702B2

公开(公告)日：2015-11-24

申请号：US14559384

申请日：2014-12-03

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： In Hyuk Song ,  Jae Hoon Park ,  Dong Soo Seo

IPC: H01L29/66 ,  H01L21/04 ,  H01L21/265 ,  H01L21/308 ,  H01L21/324 ,  H01L29/10 ,  H01L29/36 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L21/22

CPC classification number: H01L29/6634 ,  H01L21/046 ,  H01L21/22 ,  H01L21/2253 ,  H01L21/265 ,  H01L21/3081 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66674 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7825

Abstract: Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

公开(公告)号：US20150144993A1

公开(公告)日：2015-05-28

申请号：US14292297

申请日：2014-05-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Kee Ju Um ,  In Hyuk Song ,  Jae Hoon Park ,  Chang Su Jang ,  Ji Yeon Oh

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L29/0661 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/407 ,  H01L29/7397

Abstract: A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one direction in the active region; and at least one or more second trenches formed lengthwise in one direction in the termination region. The second trench has a depth deeper than that of the first trench.

Abstract translation: 功率半导体器件可以包括：在功率半导体器件的导通操作时具有流过其中形成的沟道的电流的有源区; 形成在有源区附近的端接区域; 多个第一沟槽，在有源区域中沿一个方向纵向形成; 以及至少一个或多个第二沟槽，其在端接区域中沿一个方向纵向形成。 第二沟槽的深度比第一沟槽深。

公开(公告)号：US20150076595A1

公开(公告)日：2015-03-19

申请号：US14331603

申请日：2014-07-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jae Kyu Sung ,  Jae Hoon Park ,  Kee Ju Um ,  In Hyuk Song

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7397

Abstract: A power semiconductor device may include: a first conductive type drift layer in which trench gates are formed; a second conductive type well region formed on the drift layer so as to contact the trench gate; a first conductive type source region formed on the well region so as to contact the trench gate; and a device protection region formed below a height of a lowermost portion of the source region in a height direction.

Abstract translation: 功率半导体器件可以包括：形成有沟槽栅极的第一导电型漂移层; 形成在所述漂移层上以与所述沟槽栅极接触的第二导电类型阱区; 形成在所述阱区上以便与所述沟槽栅极接触的第一导电型源极区; 以及在高度方向上形成在源极区域的最下部的高度以下的器件保护区域。