Invention Grant
- Patent Title: Three-dimensional semiconductor memory device and method for fabricating the same
- Patent Title (中): 三维半导体存储器件及其制造方法
-
Application No.: US13974122Application Date: 2013-08-23
-
Publication No.: US09076879B2Publication Date: 2015-07-07
- Inventor: Dongchul Yoo , Phil Ouk Nam , Junkyu Yang , Woong Lee , Woosung Lee , JinGyun Kim , Daehong Eom
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0100516 20120911; KR10-2013-0013509 20130206; KR10-2013-0013510 20130206
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115

Abstract:
A three-dimensional (3D) semiconductor memory device and a method for fabricating the same, the device including insulating layers stacked on a substrate; horizontal structures between the insulating layers, the horizontal structures including gate electrodes, respectively; vertical structures penetrating the insulating layers and the horizontal structures, the vertical structures including semiconductor pillars, respectively; and epitaxial patterns, each of the epitaxial patterns being between the substrate and each of the vertical structures, wherein a minimum width of the epitaxial pattern is less than a width of a corresponding one of the vertical structures.
Public/Granted literature
- US20140070302A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-03-13
Information query
IPC分类: