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公开(公告)号：US09899411B2
公开(公告)日：2018-02-20
申请号：US15414345
申请日：2017-01-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dongchul Yoo , Phil Ouk Nam , Junkyu Yang , Woong Lee , Woosung Lee , JinGyun Kim , Daehong Eom
IPC: H01L21/8247 , H01L27/11582 , H01L27/1157 , H01L29/423 , H01L29/10 , H01L29/04 , H01L29/51
CPC classification number: H01L27/11582 , H01L27/1157 , H01L29/04 , H01L29/1037 , H01L29/42356 , H01L29/4236 , H01L29/42364 , H01L29/511 , H01L29/7926
Abstract: A three-dimensional (3D) semiconductor memory device and a method for fabricating the same, the device including insulating layers stacked on a substrate; horizontal structures between the insulating layers, the horizontal structures including gate electrodes, respectively; vertical structures penetrating the insulating layers and the horizontal structures, the vertical structures including semiconductor pillars, respectively; and epitaxial patterns, each of the epitaxial patterns being between the substrate and each of the vertical structures, wherein a minimum width of the epitaxial pattern is less than a width of a corresponding one of the vertical structures.
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2.发明申请METHOD FOR OPERATING A NON VOLATILE MEMORY OF AN ELECTRONIC DEVICE AND THE ELECTRONIC DEVICE IMPLEMENTING THE SAME 审中-公开用于操作电子设备的非易失性存储器的方法和实现该电子设备的电子设备公开(公告)号：US20160335011A1
公开(公告)日：2016-11-17
申请号：US15153633
申请日：2016-05-12
Applicant: Samsung Electronics Co., Ltd
Inventor： Woosung Lee , Inhwan Song
CPC classification number: G06F3/0619 , G06F1/30 , G06F1/3287 , G06F1/3296 , G06F3/0647 , G06F3/0679 , G06F9/44505 , G06F11/004 , G06F11/1441 , G06F11/1461 , G06F11/3058 , G06F13/24 , G06F2201/86 , G11C5/141 , G11C11/5628 , G11C16/22 , G11C16/225 , G11C16/30 , Y02D10/171 , Y02D10/172 , Y02D10/43
Abstract: Various embodiments of the present disclosure provide a method of operating a non-volatile memory and an electronic device adapted to the method. When the possibility that power will be cut off in the electronic device is low or almost zero, the provision operation (e.g., an LSB backup) is interrupted which is capable of preventing data from being erased against a situation where the power is cut off. The method of managing a storage device includes: transferring an initialization command to a non-volatile memory functionally connected to a storage device; transferring a command for interrupting or executing an LSB backup to the storage device controller included in the non-volatile memory; and interrupting or executing, by the storage device controller, the LSB backup according to the LSB backup interrupt or execute command. Other modifications are provided.
Abstract translation: 本公开的各种实施例提供了一种操作非易失性存储器的方法和适用于该方法的电子设备。 当电子设备中的电力被切断的可能性低或几乎为零时，中断提供操作（例如，LSB备份），其能够防止在电力被切断的情况下数据被擦除。 管理存储设备的方法包括：将初始化命令传送到功能上连接到存储设备的非易失性存储器; 将用于中断或执行LSB备份的命令传送到包括在非易失性存储器中的存储设备控制器; 并且由存储设备控制器根据LSB备份中断或执行命令中断或执行LSB备份。 提供其他修改。
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3.发明授权公开(公告)号：US09076879B2
公开(公告)日：2015-07-07
申请号：US13974122
申请日：2013-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongchul Yoo , Phil Ouk Nam , Junkyu Yang , Woong Lee , Woosung Lee , JinGyun Kim , Daehong Eom
IPC: H01L29/792 , H01L27/115
CPC classification number: H01L27/11582 , H01L27/1157 , H01L29/04 , H01L29/1037 , H01L29/42356 , H01L29/4236 , H01L29/42364 , H01L29/511 , H01L29/7926
Abstract: A three-dimensional (3D) semiconductor memory device and a method for fabricating the same, the device including insulating layers stacked on a substrate; horizontal structures between the insulating layers, the horizontal structures including gate electrodes, respectively; vertical structures penetrating the insulating layers and the horizontal structures, the vertical structures including semiconductor pillars, respectively; and epitaxial patterns, each of the epitaxial patterns being between the substrate and each of the vertical structures, wherein a minimum width of the epitaxial pattern is less than a width of a corresponding one of the vertical structures.
Abstract translation: 一种三维（3D）半导体存储器件及其制造方法，该器件包括堆叠在衬底上的绝缘层; 绝缘层之间的水平结构，分别包括栅电极的水平结构; 垂直结构分别穿透绝缘层和水平结构，垂直结构分别包括半导体柱; 和外延图案，每个外延图案在衬底和每个垂直结构之间，其中外延图案的最小宽度小于垂直结构中对应的一个的宽度。
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公开(公告)号：US11532639B2
公开(公告)日：2022-12-20
申请号：US17036594
申请日：2020-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Lee , Chaeho Kim , Woosung Lee , Phil Ouk Nam , Junggeun Jee
IPC: H01L27/11582 , H01L27/11519 , H01L27/11556 , H01L23/535 , H01L27/11565 , H01L27/11573 , H01L27/11529
Abstract: Disclosed is a three-dimensional semiconductor memory device including a carbon-containing layer on a substrate, a plurality of electrode interlayer dielectric layers and a plurality of electrode layers that are alternately stacked on the carbon-containing layer, a cell vertical pattern that penetrates at least some of the electrode interlayer dielectric layers and the electrode layers, and a semiconductor pattern between the cell vertical pattern and the carbon-containing layer. The substrate includes a plurality of first grains. The semiconductor pattern includes a plurality of second grains. An average size of the second grains is less than an average size of the first grains.
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公开(公告)号：US11462553B2
公开(公告)日：2022-10-04
申请号：US17034274
申请日：2020-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Shinjae Kang , Woosung Lee , Jeonggil Lee , Hanmei Choi , Hauk Han
IPC: H01L27/11556 , H01L27/11519 , H01L27/11526 , H01L23/522 , H01L27/11573 , H01L27/11582 , H01L27/11565
Abstract: Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.
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Patent Agency Ranking
6.发明授权公开(公告)号：US11295785B2
公开(公告)日：2022-04-05
申请号：US16877752
申请日：2020-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woosung Lee , Chunghyun Ryu , Hyoungtaek Lim
Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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公开(公告)号：US09601496B2
公开(公告)日：2017-03-21
申请号：US14109159
申请日：2013-12-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanghoon Lee , Hyunyong Go , Sunggil Kim , Kyong-Won An , Woosung Lee , Yongseok Cho
IPC: H01L29/78 , H01L27/108 , H01L29/66 , H01L29/792 , H01L27/115
CPC classification number: H01L27/10855 , H01L27/1157 , H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/7926 , H01L2924/0002 , H01L2924/00
Abstract: In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.
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公开(公告)号：US12095176B2
公开(公告)日：2024-09-17
申请号：US17682615
申请日：2022-02-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanghue Hong , Jaewan Park , Minsung Koo , Minsoo Sohn , Woosung Lee
Abstract: An electronic device is provided. The electronic device includes an antenna, a wireless communication module electrically connected to the antenna, a flexible printed circuit board (FPCB) including a first feeding element and a second feeding element which are electrically connected to the wireless communication module, a substrate disposed above the first feeding element and the second feeding element, a first conductive pattern including a first coupling hole and a second conductive pattern including a second coupling hole, which are formed on the upper surface of the substrate, a first coupling fastener configured to penetrate the first coupling hole and the first feeding element and electrically connect the first conductive pattern and the first feeding element, and a second coupling fastener configured to penetrate the second coupling hole and the second feeding element and electrically connect the second conductive pattern and the second feeding element.
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公开(公告)号：US11854645B2
公开(公告)日：2023-12-26
申请号：US17694946
申请日：2022-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woosung Lee , Chunghyun Ryu , Hyoungtaek Lim
Abstract: A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.
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公开(公告)号：US10318184B2
公开(公告)日：2019-06-11
申请号：US15153633
申请日：2016-05-12
Applicant: Samsung Electronics Co., Ltd
Inventor： Woosung Lee , Inhwan Song
IPC: G06F1/30 , G11C11/56 , G06F3/06 , G06F11/14 , G06F13/24 , G06F9/445 , G06F11/00 , G11C5/14 , G06F1/3287 , G06F1/3296 , G11C16/22 , G06F11/30 , G11C16/30
Abstract: Various embodiments of the present disclosure provide a method of operating a non-volatile memory and an electronic device adapted to the method. When the possibility that power will be cut off in the electronic device is low or almost zero, the provision operation (e.g., an LSB backup) is interrupted which is capable of preventing data from being erased against a situation where the power is cut off. The method of managing a storage device includes: transferring an initialization command to a non-volatile memory functionally connected to a storage device; transferring a command for interrupting or executing an LSB backup to the storage device controller included in the non-volatile memory; and interrupting or executing, by the storage device controller, the LSB backup according to the LSB backup interrupt or execute command. Other modifications are provided.
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