Invention Grant
- Patent Title: Selective chemical etching process
- Patent Title (中): 选择性化学蚀刻工艺
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Application No.: US14002261Application Date: 2012-03-01
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Publication No.: US09076918B2Publication Date: 2015-07-07
- Inventor: Dario Rapisarda , Joël Dufourcq , Simon Perraud , Olivier Poncelet
- Applicant: Dario Rapisarda , Joël Dufourcq , Simon Perraud , Olivier Poncelet
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Morgan, Lewis & Bockius LLP
- Priority: FR1100624 20110302
- International Application: PCT/IB2012/050975 WO 20120301
- International Announcement: WO2012/117372 WO 20120907
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; C09K13/06 ; H01L31/032 ; H01L31/0463
Abstract:
The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.
Public/Granted literature
- US20140302633A1 Selective Chemical Etching Process Public/Granted day:2014-10-09
Information query
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