公开(公告)号：US09305790B2

公开(公告)日：2016-04-05

申请号：US14113664

申请日：2012-05-03

申请人： Nicolas Karst ,  Simon Perraud

发明人： Nicolas Karst ,  Simon Perraud

IPC分类号： B05C11/04 ,  H01L21/288 ,  B05C5/00 ,  H01L31/032 ,  H01L31/18 ,  H01L21/48 ,  B05C5/02 ,  B05C3/18

CPC分类号： H01L21/288 ,  B05C3/18 ,  B05C5/001 ,  B05C5/0254 ,  B05C11/04 ,  H01L21/4885 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： The device for knife coating a layer of ink based on copper and indium on a substrate includes a supply tank of an ink, said tank collaborating with a coating knife. In addition, the device includes means that allow the ink, the substrate and the coating knife to be kept at different and increasing respective temperatures.

摘要翻译： 用于在基板上涂覆基于铜和铟的一层油墨的装置包括油墨供应罐，所述罐与涂布刀协作。 此外，该装置包括允许墨，基底和涂布刀保持不同并增加相应温度的装置。

公开(公告)号：US20140302633A1

公开(公告)日：2014-10-09

申请号：US14002261

申请日：2012-03-01

申请人： Dario Rapisarda ,  Joël Dufourcq ,  Simon Perraud ,  Olivier Poncelet

发明人： Dario Rapisarda ,  Joël Dufourcq ,  Simon Perraud ,  Olivier Poncelet

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  C09K13/06 ,  H01L31/0322 ,  H01L31/0463 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.

摘要翻译： 本发明涉及包含CIGS表面层的薄膜基材的选择性湿化学蚀刻方法。 本发明还涉及用于薄膜光伏模块串联制造电池的方法，该方法实现了根据本发明的选择性湿化学蚀刻工艺。 本发明还涉及一种用于在薄膜光伏器件中产生小图案（例如单片互连）的方法，该方法实现了根据本发明的选择性湿化学蚀刻工艺。

公开(公告)号：US20140051245A1

公开(公告)日：2014-02-20

申请号：US14113664

申请日：2012-05-03

申请人： Nicolas Karst ,  Simon Perraud

发明人： Nicolas Karst ,  Simon Perraud

IPC分类号： H01L21/288 ,  H01L21/48

CPC分类号： H01L21/288 ,  B05C3/18 ,  B05C5/001 ,  B05C5/0254 ,  B05C11/04 ,  H01L21/4885 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： The device for knife coating a layer of ink based on copper and indium on a substrate includes a supply tank of an ink, said tank collaborating with a coating knife. In addition, the device includes means that allow the ink, the substrate and the coating knife to be kept at different and increasing respective temperatures.

摘要翻译： 用于在基板上涂覆基于铜和铟的一层油墨的装置包括油墨供应罐，所述罐与涂布刀协作。 此外，该装置包括允许墨，基底和涂布刀保持不同并增加相应温度的装置。

公开(公告)号：US20120070964A1

公开(公告)日：2012-03-22

申请号：US13220395

申请日：2011-08-29

申请人： Simon Perraud ,  Philippe Coronel

发明人： Simon Perraud ,  Philippe Coronel

IPC分类号： H01L21/20

CPC分类号： H01L29/0676 ,  B82Y40/00 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02664

摘要： This method for eliminating the catalyst residues present on the surface of solid structures made from a first material and obtained by catalytic growth, includes the following steps: catalytic growth, from the catalyst residues, of solid structures made from a second material; selective elimination of said solid structures made from a second material.

摘要翻译： 用于消除由第一种材料制成并由催化生长获得的固体结构表面上存在的催化剂残余物的方法包括以下步骤：由第二种材料制成的固体结构从催化剂残余物中催化生长; 选择性地消除由第二材料制成的所述固体结构。

公开(公告)号：US09076918B2

公开(公告)日：2015-07-07

申请号：US14002261

申请日：2012-03-01

申请人： Dario Rapisarda ,  Joël Dufourcq ,  Simon Perraud ,  Olivier Poncelet

发明人： Dario Rapisarda ,  Joël Dufourcq ,  Simon Perraud ,  Olivier Poncelet

IPC分类号： H01L21/00 ,  H01L31/18 ,  C09K13/06 ,  H01L31/032 ,  H01L31/0463

CPC分类号： H01L31/18 ,  C09K13/06 ,  H01L31/0322 ,  H01L31/0463 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.

摘要翻译： 本发明涉及包含CIGS表面层的薄膜基材的选择性湿化学蚀刻方法。 本发明还涉及用于薄膜光伏模块串联制造电池的方法，该方法实现了根据本发明的选择性湿化学蚀刻工艺。 本发明还涉及一种用于在薄膜光伏器件中产生小图案（例如单片互连）的方法，该方法实现了根据本发明的选择性湿化学蚀刻工艺。

公开(公告)号：US08669171B2

公开(公告)日：2014-03-11

申请号：US13220395

申请日：2011-08-29

申请人： Simon Perraud ,  Philippe Coronel

发明人： Simon Perraud ,  Philippe Coronel

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/0676 ,  B82Y40/00 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02664

摘要： A method is provided for eliminating catalyst residues that are present on the surface of solid structures. The solid structures are made from a first material and are obtained by catalytic growth from a substrate. The method includes the following steps: catalytically growing, from the catalyst residues, solid structures made from a second material; and selectively eliminating the solid structures made from the second material, thereby eliminating the catalyst residues.

摘要翻译： 提供了一种消除固体结构表面上存在的催化剂残留物的方法。 固体结构由第一种材料制成，并通过从基底催化生长得到。 该方法包括以下步骤：从催化剂残余物催化生长由第二材料制成的固体结构; 并选择性地消除由第二材料制成的固体结构，从而消除催化剂残留物。

公开(公告)号：US20140000713A1

公开(公告)日：2014-01-02

申请号：US14005375

申请日：2012-03-06

申请人： David Kohen ,  Nicolas Karst ,  Simon Perraud

发明人： David Kohen ,  Nicolas Karst ,  Simon Perraud

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0312

CPC分类号： H01L31/022408 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/127 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/074 ,  Y02E10/50

摘要： A device includes a plurality of wires of nanometric or micrometric dimensions formed by a semiconductor material chosen from silicon, germanium and a silicon and germanium alloy. The device further includes pellets enhancing the mechanical strength and the optical absorption properties of the device. The pellets have a diameter between 100 nm and 1 μm and are formed by spherical agglomerates of zinc oxide particles with a diameter between 10 mn and 200 nm. The pellets are in particular obtained by immersing the wires in a bath containing an alcohol-based solvent and zinc acetate under temperature and pressure conditions keeping the alcohol-based solvent in the liquid state and by thermal annealing of the wires transforming the zinc acetate into zinc oxide.

摘要翻译： 一种器件包括由选自硅，锗和硅和锗合金的半导体材料形成的多根纳米级或微米尺寸线。 该装置还包括提高装置的机械强度和光吸收特性的颗粒。 颗粒的直径在100nm和1μm之间，并且由直径在10nm和200nm之间的氧化锌颗粒的球形聚集体形成。 这些颗粒特别是通过将电线浸入含有醇类溶剂和乙酸锌的浴中，在保持醇类溶剂处于液态的温度和压力条件下，以及通过将乙酸锌转化成锌的线的热退火而获得的 氧化物。

公开(公告)号：US20130015057A1

公开(公告)日：2013-01-17

申请号：US13513328

申请日：2010-11-29

申请人： Simon Perraud ,  Joel Dufourco ,  Frederic Gaillard ,  Sebastien Noel ,  Emmanuelle Rouviere

发明人： Simon Perraud ,  Joel Dufourco ,  Frederic Gaillard ,  Sebastien Noel ,  Emmanuelle Rouviere

IPC分类号： C23C14/34 ,  C23C14/14

CPC分类号： C23C14/0057 ,  C23C14/0047 ,  C23C14/0068 ,  C23C14/0623 ,  C23C14/564

摘要： A method and device for the deposition of a film made of a semiconductive material having the formula Cu(In, Ga)X2, where X is S or Se, involves cathode sputter deposition of Cu, In, and Ga onto at least one surface of a substrate and simultaneous deposition of X in vapor phase onto the surface in a cathode chamber. A vapor form of X or its precursor is moved in a first laminar gas flow parallel to and in contact with the surface, and is simultaneously moved in a second laminar gas flow for inert gas parallel to the first laminar gas flow and located between the first laminar gas flow and a sputtering target(s), to confine the first laminar gas flow to the area around the substrate.

摘要翻译： 用于沉积由具有式Cu（In，Ga）X2的半导体材料制成的膜的方法和装置，其中X是S或Se，包括将Cu，In和Ga阴极溅射沉积到至少一个表面上 衬底，并将X在汽相中同时沉积到阴极室中的表面上。 X或其前体的蒸汽形式在与该表面平行并与其接触的第一层流气流中移动，同时在与第一层流气流平行的位于第一层流气流之间的惰性气体的第二层流气流中移动， 层流气流和溅射靶，以将第一层流气体限制在衬底周围的区域。