Invention Grant
- Patent Title: Photoresist having improved extreme-ultraviolet lithography imaging performance
- Patent Title (中): 光刻胶具有改进的极紫外光刻成像性能
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Application No.: US13033725Application Date: 2011-02-24
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Publication No.: US09081280B2Publication Date: 2015-07-14
- Inventor: Shu-Hao Chang , Tsiao-Chen Wu , Chih-Tsung Shih
- Applicant: Shu-Hao Chang , Tsiao-Chen Wu , Chih-Tsung Shih
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/039 ; C07C309/65 ; C07C381/12
Abstract:
Provided is a photoresist that includes a polymer is free of a aromatic group and a photo acid generator (PAG) that has less than three aromatic groups. In an embodiment, the PAG includes an anion component and a cation component. The anion component has one of the following chemical formulas: R31C—CR21—CR21—CR21—SO3− R31C—CR21—CR21—SO3− R31C—CR21—SO3− R31C—SO3− The cation component has one of the following chemical formulas: Wherein R1 and R2 each represent a chemical compound.
Public/Granted literature
- US20120219897A1 PHOTORESIST HAVING IMPROVED EXTREME-ULTRAVIOLET LITHOGRAPHY IMAGING PERFORMANCE Public/Granted day:2012-08-30
Information query
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