发明授权
US09082521B2 EUV multilayer mirror with interlayer and lithographic apparatus using the mirror
有权
具有中间层的EUV多层反射镜和使用该镜的光刻设备
- 专利标题: EUV multilayer mirror with interlayer and lithographic apparatus using the mirror
- 专利标题(中): 具有中间层的EUV多层反射镜和使用该镜的光刻设备
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申请号: US13201242申请日: 2010-01-11
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公开(公告)号: US09082521B2公开(公告)日: 2015-07-14
- 发明人: Denis Alexandrovich Glushkov , Vadim Yevgenyevich Banine , Leonid Aizikovitch Sjmaenok , Nikolay Nikolaevitch Salashchenko , Nikolay Ivanovich Chkhalo
- 申请人: Denis Alexandrovich Glushkov , Vadim Yevgenyevich Banine , Leonid Aizikovitch Sjmaenok , Nikolay Nikolaevitch Salashchenko , Nikolay Ivanovich Chkhalo
- 申请人地址: NL Veldhoven
- 专利权人: ASML NETHERLANDS B.V.
- 当前专利权人: ASML NETHERLANDS B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 国际申请: PCT/EP2010/050195 WO 20100111
- 国际公布: WO2010/091907 WO 20100819
- 主分类号: G02B5/08
- IPC分类号: G02B5/08 ; G21K1/06 ; B82Y10/00 ; B82Y40/00 ; G03F1/24 ; G03F7/20
摘要:
A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.
公开/授权文献
- US20110292366A1 MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS 公开/授权日:2011-12-01
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