发明授权
- 专利标题： Fabrication methods of integrated semiconductor structure
- 专利标题（中）： 集成半导体结构的制作方法
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申请号： US13107636申请日： 2011-05-13
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公开(公告)号： US09082789B2公开(公告)日： 2015-07-14
- 发明人: Chun-Hung Huang , Yu-Hsien Lin , Ming-Yi Lin , Jyh-Huei Chen
- 申请人： Chun-Hung Huang , Yu-Hsien Lin , Ming-Yi Lin , Jyh-Huei Chen
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L21/8238 ; H01L29/165 ; H01L29/78 ; H01L21/28 ; H01L29/49 ; H01L29/51
摘要：
An integrated circuit device and method for manufacturing an integrated circuit device is disclosed. The integrated circuit device comprises a core device and an input/output circuit. Each of the core device and input/output circuit includes a PMOS structure and an NMOS structure. Each of the PMOS includes a p-type metallic work function layer over a high-k dielectric layer, and each of the NMOS structure includes an n-type metallic work function layer over a high-k dielectric layer. There is an oxide layer under the high-k dielectric layer in the input/output circuit.
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