发明授权
- 专利标题: High density multi-electrode array
- 专利标题(中): 高密度多电极阵列
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申请号: US13798446申请日: 2013-03-13
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公开(公告)号: US09087742B2公开(公告)日: 2015-07-21
- 发明人: Kangguo Cheng , Arjang Hassibi , Ali Khakifirooz , Dharmendra S. Modha
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Libby Toub
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; A61B5/04 ; H01L21/768
摘要:
A high density micro-electrode array includes a transistor layer including a plurality of access transistors and a substrate in operable communication with the transistor layer including, wherein at least a portion of the substrate includes a plurality of trenches. The system includes a plurality of electrodes at least partially located in the plurality of trenches, wherein each of the plurality of electrodes is connected to at least one of the plurality of access transistors and wherein each of the electrodes is separated by a distance less than approximately one microns.
公开/授权文献
- US20130187253A1 HIGH DENSITY MULTI-ELECTRODE ARRAY 公开/授权日:2013-07-25