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公开(公告)号：US09087742B2
公开(公告)日：2015-07-21
申请号：US13798446
申请日：2013-03-13
IPC分类号： H01L27/12 , A61B5/04 , H01L21/768
CPC分类号： H01L27/1203 , A61B5/04001 , A61B2562/028 , A61B2562/046 , H01L21/76898
摘要： A high density micro-electrode array includes a transistor layer including a plurality of access transistors and a substrate in operable communication with the transistor layer including, wherein at least a portion of the substrate includes a plurality of trenches. The system includes a plurality of electrodes at least partially located in the plurality of trenches, wherein each of the plurality of electrodes is connected to at least one of the plurality of access transistors and wherein each of the electrodes is separated by a distance less than approximately one microns.
摘要翻译： 高密度微电极阵列包括包括多个存取晶体管的晶体管层和与晶体管层可操作地连通的衬底，其中至少一部分衬底包括多个沟槽。 该系统包括至少部分地位于多个沟槽中的多个电极，其中多个电极中的每一个电极连接到多个存取晶体管中的至少一个，并且其中每个电极分开一个小于大约 一微米。
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公开(公告)号：US20130187253A1
公开(公告)日：2013-07-25
申请号：US13798446
申请日：2013-03-13
IPC分类号： H01L27/12
CPC分类号： H01L27/1203 , A61B5/04001 , A61B2562/028 , A61B2562/046 , H01L21/76898
摘要： A high density micro-electrode array includes a transistor layer including a plurality of access transistors and a substrate in operable communication with the transistor layer including, wherein at least a portion of the substrate includes a plurality of trenches. The system includes a plurality of electrodes at least partially located in the plurality of trenches, wherein each of the plurality of electrodes is connected to at least one of the plurality of access transistors and wherein each of the electrodes is separated by a distance less than approximately one microns.
摘要翻译： 高密度微电极阵列包括包括多个存取晶体管的晶体管层和与晶体管层可操作地连通的衬底，其中至少一部分衬底包括多个沟槽。 该系统包括至少部分地位于多个沟槽中的多个电极，其中多个电极中的每一个电极连接到多个存取晶体管中的至少一个，并且其中每个电极分开一个小于大约 一微米。
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