发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
-
申请号: US13382332申请日: 2010-06-30
-
公开(公告)号: US09087850B2公开(公告)日: 2015-07-21
- 发明人: Atsushi Fujisawa , Hiroshi Fujii
- 申请人: Atsushi Fujisawa , Hiroshi Fujii
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2009-159511 20090706
- 国际申请: PCT/JP2010/061141 WO 20100630
- 国际公布: WO2011/004746 WO 20110113
- 主分类号: H01L21/56
- IPC分类号: H01L21/56 ; B23K26/40 ; H01L21/48 ; H01L23/31 ; H01L23/495 ; H01L23/00
摘要:
In QFN packages for vehicles which are required to have high reliability, the side surface of leads is mostly covered with lead-to-lead resin protrusions, which prevent smooth formation of solder fillets during reflow mounting. When the lead-to-lead protrusions are mechanically removed using a punching die, there is a high possibility of causing cracks of the main body of the package or terminal deformation. When a spacing is provided between the punching die and the main body of the package in order to avoid such damages, a resin residue is produced to hinder complete removal of this lead-to-lead resin protrusion. The present invention provides a method for manufacturing semiconductor device of a QFN type package using multiple leadframes having a dam bar for tying external end portions of a plurality of leads. This method includes a step of removing a sealing resin filled between the circumference of a mold cavity and the dam bar by using laser and then carrying out surface treatment, for example, solder plating.
公开/授权文献
- US20120108013A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2012-05-03
信息查询
IPC分类: