Invention Grant
- Patent Title: Methods of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14156781Application Date: 2014-01-16
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Publication No.: US09087861B2Publication Date: 2015-07-21
- Inventor: Sung-Min Hwang , Han-Soo Kim , Woon-Kyung Lee , Won-Seok Cho
- Applicant: Sung-Min Hwang , Han-Soo Kim , Woon-Kyung Lee , Won-Seok Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0005514 20130117
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/792 ; H01L27/115
Abstract:
A method of manufacturing a vertical type memory device includes stacking a first lower insulating layer, one layer of a lower sacrificial layer and a second lower insulating layer on a substrate, forming a stacking structure by stacking sacrificial layers and insulating layers, and etching an edge portion of the stacking structure to form a preliminary stepped shape pattern structure. The preliminary stepped shape pattern structure has a stepped shape edge portion. A pillar structure making contact with a surface of the substrate is formed. The preliminary stepped shape pattern structure, the lower sacrificial layer, and the first and second lower insulating layers are partially etched to form a first opening portion and a second opening portion to form a stepped shape pattern structure. The second opening portion cuts at least an edge portion of the lower sacrificial layer.
Public/Granted literature
- US20140199815A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2014-07-17
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