Invention Grant
- Patent Title: Resistive memory arrangement and a method of forming the same
- Patent Title (中): 电阻记忆装置及其形成方法
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Application No.: US13745993Application Date: 2013-01-21
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Publication No.: US09087975B2Publication Date: 2015-07-21
- Inventor: Xinpeng Wang , Xiang Li , Navab Singh , Guo-Qiang Patrick Lo
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Priority: SG201200484-2 20120120
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; B82Y10/00 ; B82Y40/00
Abstract:
According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.
Public/Granted literature
- US20130200327A1 Resistive Memory Arrangement and a Method of Forming the Same Public/Granted day:2013-08-08
Information query
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