Abstract:
According to embodiments of the present invention, a photodetector arrangement is provided. The photodetector arrangement includes a plurality of germanium-based photodetectors, each germanium-based photodetector configured to receive an optical signal and to generate an electrical signal in response to the received optical signal, and an electrode arrangement arranged to conduct the electrical signals.
Abstract:
According to embodiments of the present invention, a photodetector arrangement is provided. The photodetector arrangement includes a plurality of germanium-based photodetectors, each germanium-based photodetector configured to receive an optical signal and to generate an electrical signal in response to the received optical signal, and an electrode arrangement arranged to conduct the electrical signals.
Abstract:
According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided.
Abstract:
In various embodiments, an optical alignment structure may be provided. The optical alignment structure may include a light carrying structure configured to receive an input optical light from an external light source. The optical alignment structure may further include a light redirection mechanism coupled to the light carrying structure. The light redirection mechanism may be configured to receive the input optical light from the light carrying structure. The light redirection mechanism may be further configured to redirect the input optical light back to the light carrying structure, the redirected input optical light configured to be detected by a detector for alignment of the optical alignment structure with the external optical source.
Abstract:
According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.
Abstract:
An optical sensing system may include a light separation element configured to separate an input light into a plurality of sliced lights and a first resonator configured to receive one sliced light of the plurality of sliced lights. An effective refractive index of the first resonator may be changeable in response to a change in a refractive index of a cladding of the first resonator, a second resonator coupled to the first resonator and a detector configured to measure an intensity of the sliced light, the intensity of the sliced light based on a difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator. The difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator may be based on the effective refractive index of the first resonator.
Abstract:
In various embodiments, an optical alignment structure may be provided. The optical alignment structure may include a light carrying structure configured to receive an input optical light from an external light source. The optical alignment structure may further include a light redirection mechanism coupled to the light carrying structure. The light redirection mechanism may be configured to receive the input optical light from the light carrying structure. The light redirection mechanism may be further configured to redirect the input optical light back to the light carrying structure, the redirected input optical light configured to be detected by a detector for alignment of the optical alignment structure with the external optical source.
Abstract:
An optical sensing system may include a light separation element configured to separate an input light into a plurality of sliced lights and a first resonator configured to receive one sliced light of the plurality of sliced lights. An effective refractive index of the first resonator may be changeable in response to a change in a refractive index of a cladding of the first resonator, a second resonator coupled to the first resonator and a detector configured to measure an intensity of the sliced light, the intensity of the sliced light based on a difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator. The difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator may be based on the effective refractive index of the first resonator.
Abstract:
According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region.
Abstract:
According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region.