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    ELECTROMECHANICAL DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    ELECTROMECHANICAL DEVICE AND METHOD OF FABRICATING THE SAME 有权
    电动装置及其制造方法

    公开(公告)号：US20160289063A1

    公开(公告)日：2016-10-06

    申请号：US14778514

    申请日：2014-04-17

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

    Inventor： Ilker E. Ocak ,  Julius Ming Lin Tsai ,  Navab Singh

    IPC: B81B7/00 ,  G01P15/125 ,  G01R33/028 ,  B81C1/00

    CPC classification number: B81B7/0048 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00285 ,  B81C2203/0118 ,  B81C2203/0172 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  G01R33/00 ,  G01R33/0052 ,  G01R33/0286 ,  H01L25/00 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An electromechanical device and method of fabrication thereof comprising: providing a first wafer with a circuit arrangement on a first surface thereof and a first electrode on a second surface thereof; forming first and second via structures from the first surface to the second surface of the first wafer, said first via electrically connecting the first electrode with the circuit arrangement; providing a second wafer with a suspended structure on a first surface thereof; forming a second electrode on the suspended structure; forming an interconnect structure on the first surface of the second wafer that electrically connects with the second electrode; bonding the first wafer to the second wafer with the second surface of the first wafer facing the first surface of the second wafer, with the second via structure electrically connecting the circuit arrangement to the interconnect structure, and the first and second electrodes forming a capacitive structure.

    Abstract translation: 一种机电装置及其制造方法，包括：在其第一表面上提供具有电路装置的第一晶片和在其第二表面上的第一电极; 从所述第一晶片的第一表面到所述第二表面形成第一和第二通孔结构，所述第一通孔将所述第一电极与所述电路装置电连接; 在其第一表面上提供具有悬挂结构的第二晶片; 在所述悬挂结构上形成第二电极; 在与第二电极电连接的第二晶片的第一表面上形成互连结构; 将第一晶片接合到第二晶片，其中第一晶片的第二表面面向第二晶片的第一表面，其中第二通孔结构将电路装置电连接到互连结构，并且第一和第二电极形成电容结构 。

    Thin Film Encapsulation of Electrodes
    6.
    发明申请
    Thin Film Encapsulation of Electrodes 审中-公开
    电极薄膜封装

    公开(公告)号：US20160289064A1

    公开(公告)日：2016-10-06

    申请号：US15104182

    申请日：2014-12-16

    Applicant: Agency for Science, Technology and Research

    Inventor： Jae-Wung Lee ,  Jaibir Sharma ,  Navab Singh

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0058 ,  B81C1/00293 ,  B81C1/00825 ,  B81C2203/0145 ,  B81C2203/0154 ,  B81C2203/0172 ,  H01L21/56 ,  H01L23/28 ,  H01L23/3135 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of fabricating encapsulated microelectromechanical system (MEMS) devices, comprising: providing a substrate having one or more MEMS devices formed thereon; depositing a sacrificial layer over the substrate and the one or more MEMS devices; patterning the sacrificial layer to define one or more cavities in the sacrificial layer and around the one or more MEMS devices; forming a cap layer over the sacrificial layer and the one or more cavities, the cap layer having one or more etch holes defined therein; removing the sacrificial layer by etching the sacrificial layer at least through the one or more etch holes; and depositing a sealing layer over the cap layer and the one or more etch holes to encapsulate the one or more MEMS devices, the substrate, and the cap layer.

    Abstract translation: 一种制造封装的微机电系统（MEMS）器件的方法，包括：提供其上形成有一个或多个MEMS器件的衬底; 在所述衬底和所述一个或多个MEMS器件上沉积牺牲层; 图案化所述牺牲层以在所述牺牲层中并围绕所述一个或多个MEMS器件限定一个或多个空腔; 在所述牺牲层和所述一个或多个空腔上形成覆盖层，所述盖层具有限定在其中的一个或多个蚀刻孔; 通过至少通过所述一个或多个蚀刻孔蚀刻所述牺牲层来去除所述牺牲层; 以及在所述盖层和所述一个或多个蚀刻孔上沉积密封层以封装所述一个或多个MEMS器件，所述衬底和所述覆盖层。

    Device arrangement
    8.
    发明授权
    Device arrangement 审中-公开

    公开(公告)号：US10669152B2

    公开(公告)日：2020-06-02

    申请号：US15768531

    申请日：2016-10-06

    Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

    Inventor： Navab Singh ,  Jae Wung Lee ,  Srinivas Merugu

    IPC: B81C1/00 ,  B06B1/06 ,  B81B7/00

    Abstract: Various embodiments may provide a device arrangement. The device arrangement may include a substrate including a conductive layer. The device arrangement may further include a microelectromechanical systems (MEMS) device monolithically integrated with the substrate, wherein the MEMS device may be electrically coupled to the conductive layer. A cavity may be defined through the conductive layer for acoustically isolating the MEMS device MEMS device from the substrate. At least one anchor structure may be defined by the conductive layer to support the MEMS device.

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