发明授权
- 专利标题： Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
- 专利标题（中）： 减少热敏半导体器件热暴露的方法和结构
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申请号： US13535028申请日： 2012-06-27
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公开(公告)号： US09093429B2公开(公告)日： 2015-07-28
- 发明人: Michael B. McShane , Kevin J. Hess , Perry H. Pelley , Tab A. Stephens
- 申请人： Michael B. McShane , Kevin J. Hess , Perry H. Pelley , Tab A. Stephens
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L23/34
- IPC分类号： H01L23/34 ; H01L23/52 ; H01L23/48 ; H01L23/13 ; H01L23/36 ; H01L23/367 ; H01L23/31 ; H01L23/00
摘要：
A semiconductor device comprising a substrate, a power bus, a heat source circuit, a heat sensitive circuit, and a plurality of electrically and thermally conductive through-silicon-vias (TSVs) in the substrate. The TSVs are electrically coupled to the power bus and positioned between the heat source circuit and the heat sensitive circuit to absorb heat from the heat source circuit.
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