发明授权
US09093500B2 Methods of forming semiconductor device using bowing control layer
有权
使用弯曲控制层形成半导体器件的方法
- 专利标题： Methods of forming semiconductor device using bowing control layer
- 专利标题（中）： 使用弯曲控制层形成半导体器件的方法
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申请号： US14247635申请日： 2014-04-08
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公开(公告)号： US09093500B2公开(公告)日： 2015-07-28
- 发明人: Jae-Hong Park , Min-Joon Park , Jun-Ho Yoon , Gyung-Jin Min , Jin-Young Park , Je-Woo Han
- 申请人： Jae-Hong Park , Min-Joon Park , Jun-Ho Yoon , Gyung-Jin Min , Jin-Young Park , Je-Woo Han
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2013-0100645 20130823
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/768
摘要：
A bowing control pattern is formed on an intermediate layer. A hardmask pattern is formed on the bowing control layer. The hardmask pattern has a first opening, and the bowing control pattern has a second opening. A third opening passes through the intermediate layer and is connected to the second opening. The bowing control pattern includes first and second edges on a lower end of the second opening, and a third edge on an upper end of the second opening. When a first point on the first edge, a second point on the second edge, and a third point on a horizontal line passing through the third edge are defined, an intersecting angle between a first side from the first point to the second point, and a second side from the second point to the third point is from about 50° to about 80°.
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