发明授权
US09093575B2 Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
有权
具有氧化钽层的半导体器件和固态成像器件，其通过使必需的电极的材料或相对电极扩散而形成
- 专利标题： Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
- 专利标题（中）： 具有氧化钽层的半导体器件和固态成像器件，其通过使必需的电极的材料或相对电极扩散而形成
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申请号： US14017816申请日： 2013-09-04
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公开(公告)号： US09093575B2公开(公告)日： 2015-07-28
- 发明人: Takashi Yokoyama
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2012-218000 20120928
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/18 ; H01L31/028 ; B82Y20/00
摘要：
There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.