公开(公告)号：US20190035841A1

公开(公告)日：2019-01-31

申请号：US16137600

申请日：2018-09-21

申请人： Sony Corporation

发明人： Takashi Yokoyama

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0224 ,  B82Y20/00

CPC分类号： H01L27/14636 ,  B82Y20/00 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L2224/16145 ,  H01L2224/80895 ,  H01L2224/80896 ,  Y10S977/742 ,  Y10S977/954

摘要： A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

公开(公告)号：US10049712B2

公开(公告)日：2018-08-14

申请号：US15520932

申请日：2015-10-23

申请人： Sony Corporation

发明人： Takashi Yokoyama ,  Shunsaku Tokito ,  Hiroshi Hasegawa ,  Hajime Yamagishi

IPC分类号： G11C14/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02

摘要： A semiconductor device includes a flip-flop circuit, a control line, a first P-type transistor and a first non-volatile storage element, and a second P-type transistor and a second non-volatile storage element. The flip-flop circuit has a circular structure in which a first inverter circuit, a first connection line including a first node, a second inverter circuit, and a second connection line including a second node are coupled in order. The first P-type transistor and the first non-volatile storage element are coupled together in series between the first node and the control line. The second P-type transistor and the second non-volatile storage element are coupled together in series between the second node and the control line. The non-volatile storage element is a magnetic tunnel junction element including a pinned layer, a tunnel barrier layer, and a free layer arranged in order from a position close to the control line.

公开(公告)号：US20180158862A1

公开(公告)日：2018-06-07

申请号：US15883940

申请日：2018-01-30

申请人： Sony Corporation

发明人： Takashi Yokoyama ,  Taku Umebayashi

IPC分类号： H01L27/146 ,  H01L21/84 ,  H01L27/22 ,  H01L21/768 ,  H01L27/12 ,  H01L23/48

CPC分类号： H01L27/14643 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L27/1203 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate.

公开(公告)号：US09972772B2

公开(公告)日：2018-05-15

申请号：US15417572

申请日：2017-01-27

申请人： SONY CORPORATION

发明人： Taku Umebayashi ,  Shunichi Sukegawa ,  Takashi Yokoyama ,  Masanori Hosomi ,  Yutaka Higo

IPC分类号： H01L27/22 ,  H01L27/12 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/1203 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

摘要： The present disclosure relates to a memory cell structure, a method of manufacturing a memory, and a memory apparatus that are capable of providing a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat.A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.

公开(公告)号：US20150380463A1

公开(公告)日：2015-12-31

申请号：US14847699

申请日：2015-09-08

申请人： Sony Corporation

发明人： Takashi Yokoyama

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L27/2436 ,  H01L21/823431 ,  H01L21/84 ,  H01L21/845 ,  H01L27/12 ,  H01L27/228 ,  H01L43/02 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.

摘要翻译： 一种半导体器件，包括在半导体衬底的主表面侧上的晶体管; 以及在半导体基板的背面侧的电阻变化元件，其中，所述晶体管包括在所述半导体衬底中的低电阻部分，所述低电阻部分延伸到所述半导体衬底的背面，提供绝缘膜 与低电阻部的背面接触，绝缘膜具有面向低电阻部的开口，电阻变化元件通过开口与低电阻部连接。

公开(公告)号：US09093575B2

公开(公告)日：2015-07-28

申请号：US14017816

申请日：2013-09-04

申请人： Sony Corporation

发明人： Takashi Yokoyama

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  B82Y20/00

CPC分类号： H01L27/14636 ,  B82Y20/00 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L2224/16145 ,  Y10S977/742 ,  Y10S977/954

摘要： There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

摘要翻译： 提供了一种包括半导体层的半导体器件，包括有源区，使用有源区形成的半导体元件，通过以与有源区隔离的岛状金属化半导体层的部分而获得的连接区域，绝缘体 形成为覆盖半导体层的一个主表面侧的膜，经由绝缘膜设置为面对半导体元件和连接区域的电极以及穿过绝缘膜的触点，以根据需要部分地选择性地形成 在将半导体元件或连接区域连接到电极的部分中。

公开(公告)号：US20140332749A1

公开(公告)日：2014-11-13

申请号：US14268774

申请日：2014-05-02

申请人： Sony Corporation

发明人： Takashi Yokoyama

IPC分类号： H01L45/00 ,  H01L29/78 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L27/2436 ,  H01L21/823431 ,  H01L21/84 ,  H01L21/845 ,  H01L27/12 ,  H01L27/228 ,  H01L43/02 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A semiconductor device includes: a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.

摘要翻译： 半导体器件包括：在半导体衬底的主表面侧上的晶体管; 以及在半导体基板的背面侧的电阻变化元件，其中，所述晶体管包括在所述半导体衬底中的低电阻部分，所述低电阻部分延伸到所述半导体衬底的背面，提供绝缘膜 与低电阻部的背面接触，绝缘膜具有面向低电阻部的开口，电阻变化元件通过开口与低电阻部连接。

公开(公告)号：US10923533B2

公开(公告)日：2021-02-16

申请号：US15763178

申请日：2016-09-16

申请人： SONY CORPORATION

发明人： Yasuo Kanda ,  Takashi Yokoyama

IPC分类号： H01L27/22 ,  G11C14/00 ,  H01L29/82 ,  H03K19/17736 ,  H01L27/06 ,  H01L43/08 ,  H01L27/24 ,  H03K19/003 ,  H03K19/0948 ,  H01L27/092 ,  H01L27/11

摘要： A volatile logic circuit has a storage node, and stores inputted information. A plurality of non-volatile elements are connected to the storage node of the volatile logic circuit through the same connection gate, and control lines for control for these non-volatile elements are connected to the respective non-volatile elements, every non-volatile element. A plurality of non-volatile elements are connected to the volatile logic circuit through the same connection gate in such a way, thereby enabling the yield to be enhanced.

公开(公告)号：US10269867B2

公开(公告)日：2019-04-23

申请号：US15107977

申请日：2014-12-11

申请人： SONY CORPORATION

发明人： Takashi Yokoyama ,  Taku Umebayashi

IPC分类号： H01L29/04 ,  H01L27/22 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/768 ,  H01L43/02 ,  H01L27/24 ,  H01L29/78

摘要： A semiconductor device of the technology includes a first diffusion section (22), a second diffusion section (21), a channel section (23), a gate section (24), and a stress application section (31, 32, or 33). In a semiconductor layer (10) having a groove (10A), the first diffusion section (22) is formed at or in the vicinity of a bottom of the groove (10A), the second diffusion section (21) is formed at an upper end of the groove (10A), and the channel section (23) is formed between the first diffusion section (22) and the second diffusion section (21). The gate section (24) is buried in the groove (10A) at a position opposing the channel section (23). The stress application section (31, 32, or 33) applies one of compressive stress and tensile stress to the channel section (23) in a normal direction to the semiconductor layer (10).

公开(公告)号：US20180233539A1

公开(公告)日：2018-08-16

申请号：US15952939

申请日：2018-04-13

申请人： Sony Corporation

发明人： Takashi Yokoyama

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/22 ,  H01L27/12 ,  H01L43/02

CPC分类号： H01L27/2436 ,  H01L21/823431 ,  H01L21/84 ,  H01L21/845 ,  H01L27/12 ,  H01L27/228 ,  H01L43/02 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

摘要： A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.