A test method of a semiconductor device and a semiconductor test apparatus. The test method includes providing a semiconductor device including a substrate having an active region and an isolation region, a volatile device cell including a gate insulation layer and a gate on the active region, a junction region in the active region, a capacitor connected to the junction region, and a passing gate on the isolation region, providing a first test voltage to the gate and a second test voltage greater than the first test voltage to the passing gate to deteriorate interfacial defects of the gate insulation layer, and measuring retention characteristics of the volatile device cell.