Invention Grant
- Patent Title: Methods and systems for evaluating extreme ultraviolet mask flatness
- Patent Title (中): 评估极紫外线平板度的方法和系统
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Application No.: US13239052Application Date: 2011-09-21
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Publication No.: US09104122B2Publication Date: 2015-08-11
- Inventor: Gian Francesco Lorusso , Sang Lee
- Applicant: Gian Francesco Lorusso , Sang Lee
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP10194072 20101208
- Main IPC: G03B27/68
- IPC: G03B27/68 ; G03B27/54 ; G03B27/62 ; G03B27/32 ; G03F7/20 ; G03F1/24 ; G03F1/84 ; G03B27/52 ; G03B27/42

Abstract:
Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
Public/Granted literature
- US20120075604A1 Methods and Systems for Evaluating Extreme Ultraviolet Mask Flatness Public/Granted day:2012-03-29
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