Invention Grant
- Patent Title: Graphene transparent electrode and method for manufacturing the same
- Patent Title (中): 石墨烯透明电极及其制造方法
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Application No.: US13656854Application Date: 2012-10-22
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Publication No.: US09105378B2Publication Date: 2015-08-11
- Inventor: Woon Chun Kim , Kang Heon Hur
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Ladas & Parry, LLP
- Priority: KR10-2011-0108865 20111024
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01B13/34 ; H01B1/24 ; H01B1/04 ; H01L31/0224 ; H01L31/18 ; B82Y40/00 ; H01M4/1393 ; H01M4/96 ; B82Y30/00

Abstract:
Disclosed herein are a method for manufacturing a graphene transparent electrode and a graphene transparent electrode manufactured by the method. The method includes: providing a graphene oxide solution: forming a metal thin film on a glass substrate; coating the graphene oxide solution on the metal thin film, followed by drying; primarily reducing the thus obtained graphene oxide by using a reducing agent, to obtain reduced graphene oxide; secondarily reducing the reduced graphene oxide by heat treatment under the inert atmosphere, to form a reduced layer; compressing a transparent film on the reduced layer; and etching the metal film by an etching solution. The method enables a graphene transparent electrode having economical feasibility and excellent electric conductivity to be manufactured.
Public/Granted literature
- US20130133925A1 GRAPHENE TRANSPARENT ELECTRODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-05-30
Information query
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