Invention Grant
US09105443B2 Multi-step location specific process for substrate edge profile correction for GCIB system
有权
GCIB系统基板边缘轮廓校正的多步位置特定工艺
- Patent Title: Multi-step location specific process for substrate edge profile correction for GCIB system
- Patent Title (中): GCIB系统基板边缘轮廓校正的多步位置特定工艺
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Application No.: US14548550Application Date: 2014-11-20
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Publication No.: US09105443B2Publication Date: 2015-08-11
- Inventor: Hongyu H. Yue , Noel Russell , Vincent Gizzo , Joshua LaRose , Steven P. Caliendo
- Applicant: TEL Epion Inc.
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: G21K5/00
- IPC: G21K5/00 ; H01J37/20 ; H01J37/317 ; H01J37/305
Abstract:
Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.
Public/Granted literature
- US20150137006A1 MULTI-STEP LOCATION SPECIFIC PROCESS FOR SUBSTRATE EDGE PROFILE CORRECTION FOR GCIB SYSTEM Public/Granted day:2015-05-21
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