公开(公告)号：US20160322266A1

公开(公告)日：2016-11-03

申请号：US15142147

申请日：2016-04-29

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  Soo Doo Chae ,  Vincent Gizzo ,  Joshua LaRose ,  Nicholas Joy

IPC: H01L21/66 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L22/20 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L22/12

Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

Abstract translation: 描述了用于校正衬底上的表面轮廓的方法。 特别地，该方法包括接收具有由第一材料和第二材料构成的非均质层的基底，其中所述异质层具有暴露第一材料和第二材料的初始上表面，并且限定穿过基底的第一表面轮廓 。 该方法还包括设置异质层的目标表面轮廓，使用气体簇离子束（GCIB）蚀刻工艺选择性地去除第一材料的至少一部分，以及使第二材料下方的第一材料凹陷，然后选择性地 去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面，并且限定第二表面轮廓，其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。

公开(公告)号：US10971411B2

公开(公告)日：2021-04-06

申请号：US16154025

申请日：2018-10-08

Applicant: TEL Epion Inc.

Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  G05B19/418

Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

公开(公告)号：US20150137006A1

公开(公告)日：2015-05-21

申请号：US14548550

申请日：2014-11-20

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。

公开(公告)号：US10256095B2

公开(公告)日：2019-04-09

申请号：US15266639

申请日：2016-09-15

Applicant: TEL Epion Inc.

Inventor： Soo Doo Chae ,  Noel Russell ,  Joshua LaRose ,  Nicholas Joy ,  Luis Fernandez ,  Allen J. Leith ,  Steven P. Caliendo ,  Yan Shao ,  Vincent Lagana-Gizzo

IPC: H01L21/02 ,  H01L21/66 ,  G05B19/406 ,  H01L21/265 ,  H01L21/263 ,  H01J37/304

Abstract: A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

公开(公告)号：US20190043766A1

公开(公告)日：2019-02-07

申请号：US16154025

申请日：2018-10-08

Applicant: TEL Epion Inc.

Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

IPC: H01L21/66 ,  H01J37/32 ,  G05B19/418 ,  H01L21/3065

Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

公开(公告)号：US20170053843A1

公开(公告)日：2017-02-23

申请号：US15242376

申请日：2016-08-19

Applicant: TEL Epion Inc.

Inventor： Joshua LaRose ,  Brian D. Pfeifer ,  Vincent Lagana-Gizzo ,  Noel Russell

IPC: H01L21/66 ,  G05B23/02 ,  G05B19/19 ,  G05B19/406 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L22/20 ,  G05B19/41875 ,  G05B2219/32216 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/12 ,  Y02P90/22

Abstract: A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

Abstract translation: 描述用于对工件进行校正处理的系统和方法。 所述系统和方法包括从第一源接收第一组参数数据，所述第一组在诊断上与微电子工件的至少第一部分相关，以及从不同于诊断相关的第一源的第二源接收第二组参数数据 到微电子工件的至少第二部分。 此后，产生校正过程，并且通过使用第一组参数数据和第二组参数数据的组合将校正过程应用于目标区域来处理微电子工件的目标区域。

公开(公告)号：US09875947B2

公开(公告)日：2018-01-23

申请号：US15142147

申请日：2016-04-29

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  Soo Doo Chae ,  Vincent Gizzo ,  Joshua LaRose ,  Nicholas Joy

IPC: H01L21/66 ,  H01L21/311 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L22/20 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L22/12

Abstract: A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

公开(公告)号：US09502209B2

公开(公告)日：2016-11-22

申请号：US14822172

申请日：2015-08-10

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: G21K5/04 ,  H01J37/20 ,  H01J37/317 ,  H01J37/305

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

公开(公告)号：US09123505B1

公开(公告)日：2015-09-01

申请号：US14492819

申请日：2014-09-22

Applicant: TEL Epion Inc.

Inventor： Vincent Lagana-Gizzo ,  Noel Russell ,  Joshua LaRose ,  Soo Doo Chae

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/304 ,  H01J37/3005 ,  H01J37/3053 ,  H01J2237/08 ,  H01J2237/30455 ,  H01J2237/3151 ,  H01J2237/317

Abstract: A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.

Abstract translation: 描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。 该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。 另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性 ，作为工件上层位置的函数，以达到测量属性的目标轮廓。

公开(公告)号：US09105443B2

公开(公告)日：2015-08-11

申请号：US14548550

申请日：2014-11-20

Applicant: TEL Epion Inc.

Inventor： Hongyu H. Yue ,  Noel Russell ,  Vincent Gizzo ,  Joshua LaRose ,  Steven P. Caliendo

IPC: G21K5/00 ,  H01J37/20 ,  H01J37/317 ,  H01J37/305

CPC classification number: H01J37/20 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/30483

Abstract: Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Abstract translation: 公开了一种用于通过气体簇离子束（GCIB）或任何其它类型的离子束扫描衬底或其它工件的装置，系统和方法。 工件扫描装置被配置为接收和保持用于GCIB照射的基板，并且通过两次运动通过GCIB在两个方向上进行扫描：往复式快速扫描运动和慢扫描运动。 使用伺服电动机和皮带驱动系统来驱动缓慢扫描运动，所述皮带驱动系统被配置为降低工件扫描装置的故障率。