Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13875733Application Date: 2013-05-02
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Publication No.: US09105489B2Publication Date: 2015-08-11
- Inventor: Samuel Hartmann , Dominik Trüssel
- Applicant: ABB TECHNOLOGY AG
- Applicant Address: CH Zürich
- Assignee: ABB TECHNOLOGY AG
- Current Assignee: ABB TECHNOLOGY AG
- Current Assignee Address: CH Zürich
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: EP12166376 20120502
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/06 ; H01L25/07 ; H01L25/18
Abstract:
A power semiconductor module includes a base plate and at least one pair of substrates mounted on the base plate. Multiple power semiconductors are mounted on each substrate. The power semiconductors are arranged on each substrate with a different number of power semiconductors along opposite edges thereof. The at least one pair of substrates is arranged on the base plate with the respective edges of the substrates provided with a lower number of power semiconductors facing towards each other.
Public/Granted literature
- US20130292739A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2013-11-07
Information query
IPC分类:
