Invention Grant
US09105532B2 Semiconductor device and method of forming interconnect structure over seed layer on contact pad of semiconductor die without undercutting seed layer beneath interconnect structure
有权
在半导体芯片的接触焊盘上在晶种层上形成互连结构的半导体器件和方法，其中互连结构下方没有切割种子层
- Patent Title: Semiconductor device and method of forming interconnect structure over seed layer on contact pad of semiconductor die without undercutting seed layer beneath interconnect structure
- Patent Title (中): 在半导体芯片的接触焊盘上在晶种层上形成互连结构的半导体器件和方法，其中互连结构下方没有切割种子层
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Application No.: US14503698Application Date: 2014-10-01
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Publication No.: US09105532B2Publication Date: 2015-08-11
- Inventor: Won Kyoung Choi , Pandi C. Marimuthu
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L23/00 ; H01L23/31
Abstract:
A semiconductor device has a semiconductor die with a first conductive layer formed over the die. A first insulating layer is formed over the die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is constructed by forming a second insulating layer over the first insulating layer with a second opening having a width less than the first opening and depositing a conductive material into the second opening. The interconnect structure can be a conductive pillar or conductive pad. The interconnect structure has a width less than a width of the first opening. The second conductive layer over the first insulating layer outside the first opening is removed while leaving the second conductive layer under the interconnect structure.
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