Invention Grant
- Patent Title: Bit cell with double patterned metal layer structures
- Patent Title (中): 具有双重图案化金属层结构的位单元
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Application No.: US14337596Application Date: 2014-07-22
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Publication No.: US09105643B2Publication Date: 2015-08-11
- Inventor: Juhan Kim , Mahbub Rashed
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/48 ; H01L21/337 ; H01L21/205 ; H01L23/538 ; H01L27/02 ; H01L27/11

Abstract:
An approach for providing SRAM bit cells with double patterned metal layer structures is disclosed. Embodiments include: providing, via a first patterning process, a word line structure, a ground line structure, a power line structure, or a combination thereof; and providing, via a second patterning process, a bit line structure proximate the word line structure, the ground line structure, the power line structure, or a combination thereof. Embodiments include: providing a first landing pad as the word line structure, and a second landing pad as the ground line structure; and providing the first landing pad to have a first tip edge and a first side edge, and the second landing pad to have a second tip edge and a second side edge, wherein the first side edge faces the second side edge.
Public/Granted literature
- US20140332967A1 BIT CELL WITH DOUBLE PATTERENED METAL LAYER STRUCTURES Public/Granted day:2014-11-13
Information query
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