Invention Grant
- Patent Title: Insulated gate bipolar transistor
- Patent Title (中): 绝缘栅双极晶体管
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Application No.: US14149412Application Date: 2014-01-07
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Publication No.: US09105680B2Publication Date: 2015-08-11
- Inventor: Maxi Andenna , Munaf Rahimo , Chiara Corvasce , Arnost Kopta
- Applicant: ABB TECHNOLOGY AG
- Applicant Address: CH Zurich
- Assignee: ABB TECHNOLOGY AG
- Current Assignee: ABB TECHNOLOGY AG
- Current Assignee Address: CH Zurich
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: EP11173059 20110707
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/739 ; H01L29/10 ; H01L29/66

Abstract:
An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to the base layer and extending deeper into the drift layer than the base layer, a well arranged lateral to the base layer and extending deeper into the drift layer than the base layer, an enhancement layer surrounding the base layer so as to completely separate the base layer from the drift layer and the well, an electrically conducting layer covering the well and separated from the well by a second electrically insulating layer, and a third insulating layer having a recess on top of the electrically conducting layer such that the electrically conducting layer electrically contacts a emitter electrode.
Public/Granted literature
- US20140124829A1 INSULATED GATE BIPOLAR TRANSISTOR Public/Granted day:2014-05-08
Information query
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