发明授权
- 专利标题： Semiconductor physical quantity sensor and method for manufacturing the same
- 专利标题（中）： 半导体物理量传感器及其制造方法
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申请号： US13957738申请日： 2013-08-02
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公开(公告)号： US09105753B2公开(公告)日： 2015-08-11
- 发明人: Masaya Tanaka , Hisanori Yokura
- 申请人： DENSO CORPORATION
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2012-178244 20120810; JP2013-064488 20130326
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L29/76 ; H01L21/00 ; G01L9/06 ; H01L29/84 ; G01L9/00 ; H01L29/8605 ; H01L27/06
摘要：
A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.
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