A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λlase.