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    MULTI-LAYER OPTICAL DEVICE EXHIBITING ANOMALOUS DISPERSION
    1.
    发明申请
    MULTI-LAYER OPTICAL DEVICE EXHIBITING ANOMALOUS DISPERSION 有权

    公开(公告)号：US20210247662A1

    公开(公告)日：2021-08-12

    申请号：US16783668

    申请日：2020-02-06

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Ali Eshaghian Dorche ,  Thomas Wunderer ,  Noble M. Johnson

    IPC: G02F1/365 ,  G02B9/14 ,  G02B6/10 ,  H01S3/08

    Abstract: An optical device has a first optical layer with a first dispersion response as a first function of wavelength. A second optical layer has a second dispersion response as a function of wavelength that is different than the first function. A separating layer is located between the first and second optical layers and has a lower refractive index than the first layer and the second layer. A thickness of the separating layer is selected such that the first and second dispersion responses combine to create an anomalous dispersion about a target wavelength. The anomalous dispersion results in the optical device emitting a wideband coherent optical output about the target wavelength in response to an optical input at the target wavelength.

    Structure for electron-beam pumped edge-emitting device and methods for producing same
    6.
    发明授权
    Structure for electron-beam pumped edge-emitting device and methods for producing same 有权
    电子束泵浦边缘发射装置的结构及其制造方法

    公开(公告)号：US08964796B2

    公开(公告)日：2015-02-24

    申请号：US13920248

    申请日：2013-06-18

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Thomas Wunderer ,  John E. Northrup ,  Mark R. Teepe ,  Zhihong Yang ,  Christopher L. Chua ,  Noble M. Johnson

    IPC: H01S3/30 ,  H01S5/343 ,  H01S5/34

    CPC classification number: H01S5/343 ,  H01S5/0035 ,  H01S5/0207 ,  H01S5/0261 ,  H01S5/04 ,  H01S5/0425 ,  H01S5/3211 ,  H01S5/3401 ,  H01S5/342 ,  H01S5/34333 ,  H01S2301/176

    Abstract: A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).

    Abstract translation: 半导体发光器件包括导光结构，设置在导光结构内的发光层，以及用于在器件内放电多余电荷的结构。 与光束相反，器件可能被电子束激发，以产生电子 - 空穴对。 发光层被配置用于光生成而不需要p-n结，并且因此不嵌入在p-n结的内部或部分内。 消除p型物质的掺杂，减少器件损耗并允许在短波长（如300nm以下）下进行工作。 公开了诸如顶侧包覆层的各种结构，用于放电束诱导的电荷。 单个设备可以用多个电子束泵操作，以使得能够相对较厚的有源层或驱动多个分离的有源层。 合作弯曲的端面适合有源区域内的可能的离轴共振。

    Polarization controlled transistor
    7.
    发明授权
    Polarization controlled transistor 有权

    公开(公告)号：US11848371B2

    公开(公告)日：2023-12-19

    申请号：US16920249

    申请日：2020-07-02

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Thomas Wunderer ,  Jengping Lu ,  Noble M. Johnson

    IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20

    CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7788

    Abstract: A transistor includes a first layer comprising a group III-nitride semiconductor. A second layer comprising a group III-nitride semiconductor is disposed over the first layer. A third layer comprising a group III-nitride semiconductor is disposed over the second layer. An interface between the second layer and the third layer form a polarization heterojunction. A fourth layer comprising a group III-nitride semiconductor is disposed over the third layer. An interface between the third layer and the fourth layer forms a pn junction. A first electrical contact pad is disposed on the fourth layer. A second electrical contact pad is disposed on the third layer. A third electrical contact pad is electronically coupled to bias the polarization heterojunction.

    FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY
    8.
    发明申请
    FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY 有权

    公开(公告)号：US20220236485A1

    公开(公告)日：2022-07-28

    申请号：US17159406

    申请日：2021-01-27

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Thomas Wunderer

    IPC: G02B6/122 ,  C30B25/04 ,  H01L21/02 ,  C30B29/40

    Abstract: A mask material is deposited on a substrate or growth template. The substrate or growth template is compatible with crystalline growth of a crystalline optical material. Patterned portions of the mask material are removed to expose one or more regions of the substrate or growth template. The one or more regions have target shapes of one or more optical components. The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components.

    Multi-layer optical device exhibiting anomalous dispersion
    9.
    发明授权
    Multi-layer optical device exhibiting anomalous dispersion 有权

    公开(公告)号：US11226537B2

    公开(公告)日：2022-01-18

    申请号：US16783668

    申请日：2020-02-06

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Ali Eshaghian Dorche ,  Thomas Wunderer ,  Noble M. Johnson

    IPC: G02F1/365 ,  G02F1/35 ,  G02F1/39 ,  G02B6/10

    Abstract: An optical device has a first optical layer with a first dispersion response as a first function of wavelength. A second optical layer has a second dispersion response as a function of wavelength that is different than the first function. A separating layer is located between the first and second optical layers and has a lower refractive index than the first layer and the second layer. A thickness of the separating layer is selected such that the first and second dispersion responses combine to create an anomalous dispersion about a target wavelength. The anomalous dispersion results in the optical device emitting a wideband coherent optical output about the target wavelength in response to an optical input at the target wavelength.

    INDEX AND GAIN COUPLED DISTRIBUTED FEEDBACK LASER
    10.
    发明申请
    INDEX AND GAIN COUPLED DISTRIBUTED FEEDBACK LASER 有权

    公开(公告)号：US20210391692A1

    公开(公告)日：2021-12-16

    申请号：US17460499

    申请日：2021-08-30

    Applicant: Palo Alto Research Center Incorporated

    Inventor： Thomas Wunderer

    IPC: H01S5/12 ,  H01S5/20

    Abstract: A method of forming a laser involves forming, on a substrate, a first epitaxial part of the laser that includes at least an active region layer surrounded by first and second waveguide layers. A dielectric layer is formed over the first epitaxial part. Two or more mask openings are patterned within the dielectric layer. The mask openings extend normal to a light-propagation direction of the laser and are spaced apart in the light-propagation direction of the laser. A second epitaxial part of the laser is formed in the mask openings using selective area epitaxy. The second epitaxial part includes a refractive grating with three-dimensional grating features.

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