发明授权
- 专利标题： Method and apparatus for detecting relationship between thermal and electrical properties of semiconductor device
- 专利标题（中）： 用于检测半导体器件的热和电特性之间关系的方法和装置
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申请号： US13628058申请日： 2012-09-27
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公开(公告)号： US09110125B2公开(公告)日： 2015-08-18
- 发明人: Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou , Chun-Fan Dai , Yi-Ping Peng
- 申请人： Chien-Ping Wang , Tzung-Te Chen , Pei-Ting Chou , Chun-Fan Dai , Yi-Ping Peng
- 申请人地址： TW Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 优先权： TW101129424A 20120814
- 主分类号： G01R31/02
- IPC分类号： G01R31/02 ; G01R31/26 ; G01R31/28 ; G01R31/30
摘要：
A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.
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