Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US13726346Application Date: 2012-12-24
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Publication No.: US09110233B2Publication Date: 2015-08-18
- Inventor: Ki-Chul Kim , Bong-Jin Kuh , Jung-Yun Won , Eun-Ha Lee , Han-Mei Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0000052 20120102
- Main IPC: G02F1/035
- IPC: G02F1/035 ; G02B6/122 ; G02B6/124 ; G02F1/025 ; G02B6/132 ; G02B6/12

Abstract:
A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation .
Public/Granted literature
- US20130170784A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2013-07-04
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