公开(公告)号：US09110233B2

公开(公告)日：2015-08-18

申请号：US13726346

申请日：2012-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Chul Kim ,  Bong-Jin Kuh ,  Jung-Yun Won ,  Eun-Ha Lee ,  Han-Mei Choi

IPC: G02F1/035 ,  G02B6/122 ,  G02B6/124 ,  G02F1/025 ,  G02B6/132 ,  G02B6/12

CPC classification number: G02B6/13 ,  G02B6/122 ,  G02B6/124 ,  G02B6/131 ,  G02B6/132 ,  G02B2006/12061 ,  G02B2006/121 ,  G02B2006/12107 ,  G02B2006/12147 ,  G02F1/025 ,  G02F1/035 ,  H01L29/66477

Abstract: A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation .

Abstract translation: 半导体器件包括单晶衬底，电子元件和光学元件。 电元件设置在单晶衬底上。 电气元件包括以晶体取向<110>延伸的栅极电极和与栅电极相邻的源极和漏极区域。 源极区域和漏极区域布置在基本上垂直于栅电极延伸的方向的方向上。 光学元件设置在单晶衬底上。 光学元件包括以晶体取向<010>延伸的光波导。