发明授权
- 专利标题： IC resistor formed with integral heatsinking structure
- 专利标题（中）： 集成电阻形成整体散热结构
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申请号： US12537994申请日： 2009-08-07
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公开(公告)号： US09111779B2公开(公告)日： 2015-08-18
- 发明人: Young-Joon Park , Ki-Don Lee
- 申请人： Young-Joon Park , Ki-Don Lee
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Alan A. R. Cooper; Frank D. Cimino
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L27/08 ; H01L23/367 ; H01L49/02 ; H01L27/02
摘要：
A resistor is formed on field oxide with a portion of the resistor body configured to overlap an active region in an integrated circuit (IC) substrate to provide heatsinking for the resistor body. In one embodiment, cooling fingers extend from the resistor body beyond the field oxide to overlap the active region. In another embodiment, minor areas of the resistor body overlap the active region. The resistor body may be formed of polycrystalline silicon (polysilicon), silicided polysilicon, or metal. An oxide having greater thermal conductance than the field oxide is formed between the overlapping parts of the resistor body and the active region.
公开/授权文献
- US20100032770A1 IC RESISTOR FORMED WITH INTEGRAL HEATSINKING STRUCTURE 公开/授权日：2010-02-11
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