发明授权
- 专利标题： Nonvolatile memory device and fabricating method thereof
- 专利标题（中）： 非易失存储器件及其制造方法
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申请号： US13775833申请日： 2013-02-25
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公开(公告)号： US09112045B2公开(公告)日： 2015-08-18
- 发明人: Ju-Hyung Kim , Chang-Seok Kang , Woon-Kyung Lee
- 申请人： Ju-Hyung Kim , Chang-Seok Kang , Woon-Kyung Lee
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLP
- 优先权： KR10-2012-0022466 20120305
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/66 ; H01L29/423 ; H01L29/51 ; H01L27/115
摘要：
A nonvolatile memory device comprises a channel pattern, a first interlayer dielectric film and a second interlayer dielectric film spaced apart from each other and stacked over each other, a gate pattern disposed between the first interlayer dielectric film and the second interlayer dielectric film, a trap layer disposed between the gate pattern and the channel pattern and a charge spreading inhibition layer disposed between the channel pattern and the first interlayer dielectric film and between the channel pattern and the second interlayer dielectric film. The charge spreading inhibition layer may include charges inside or on its surface. The charge spreading inhibition layer includes at least one of a metal oxide film or a metal nitride film or a metal oxynitride film having a greater dielectric constant than a silicon oxide film.
公开/授权文献
- US20130228849A1 NONVOLATILE MEMORY DEVICE AND FABRICATING METHOD THEREOF 公开/授权日：2013-09-05
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