发明授权
- 专利标题： Method of fabricating a resistive non-volatile memory device
- 专利标题（中）： 制造电阻性非易失性存储器件的方法
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申请号： US13415705申请日： 2012-03-08
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公开(公告)号： US09112144B2公开(公告)日： 2015-08-18
- 发明人: Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
- 申请人： Tzyh-Cheang Lee , Fu-Liang Yang , Tseung-Yuen Tseng , Chih-Yang Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24
摘要：
A method of fabricating a memory cell includes forming a bottom electrode on a substrate, a variable resistive material layer on the bottom electrode, and a top electrode on the variable resistive material layer. A first metal oxide layer interposes the top electrode and the variable resistive material layer. In an embodiment, the first metal oxide layer is a self-formed layer provided by the oxidation of a portion of the top electrode. In an embodiment, a second metal oxide layer is provided interposing the first metal oxide layer and the variable resistive material layer. The second metal oxide may be a self-formed layer formed by the reduction of the variable resistive material layer.