Invention Grant
- Patent Title: MEMS device and process for RF and low resistance applications
- Patent Title (中): 用于RF和低电阻应用的MEMS器件和工艺
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Application No.: US13687304Application Date: 2012-11-28
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Publication No.: US09114977B2Publication Date: 2015-08-25
- Inventor: Michael J. Daneman , Martin Lim , Xiang Li , Li-Wen Hung
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: Sawyer Law Group, P.C.
- Main IPC: H01L29/87
- IPC: H01L29/87 ; B81C3/00 ; B81B3/00

Abstract:
MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.
Public/Granted literature
- US20140145244A1 MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS Public/Granted day:2014-05-29
Information query
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