Invention Grant
- Patent Title: Multiple angles of incidence semiconductor metrology systems and methods
- Patent Title (中): 多重入射角度半导体测量系统和方法
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Application No.: US14043783Application Date: 2013-10-01
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Publication No.: US09116103B2Publication Date: 2015-08-25
- Inventor: David Y. Wang , Klaus Flock , Lawrence Rotter , Shankar Krishnan , Johannes D. de Veer , Catalin Filip , Gregory Brady , Muzammil Arain , Andrei Shchegrov
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Kwan & Olynick LLP
- Main IPC: G01J4/00
- IPC: G01J4/00 ; G01N21/21 ; G01N21/95 ; G01N21/956

Abstract:
An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.
Public/Granted literature
- US20140375981A1 MULTIPLE ANGLES OF INCIDENCE SEMICONDUCTOR METROLOGY SYSTEMS AND METHODS Public/Granted day:2014-12-25
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