Abstract:
A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.
Abstract:
A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.
Abstract:
An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.
Abstract:
An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.
Abstract:
Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.
Abstract:
A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.
Abstract:
An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.
Abstract:
One or more non-zero diffraction orders are selected, and these selected one or more zero or non-zero diffraction orders are selected for eliminating or obtaining corresponding zero or non-zero diffraction order terms or interference term from measurements from a periodic target using an optical metrology tool. The periodic target has a pitch, and the measurements contain a zero diffraction order and one or more non-zero diffraction order terms. Using the optical metrology tool, an incident beam is directed to positions on the target, and the measurements are obtained from the target in response to the incident beam. The measurements are processed to eliminate or obtain each zero or non-zero diffraction order term or interference term associated with each selected zero or non-zero diffraction order, resulting in a processed metrology signal. The positions are shifted from each other so as to cause the zero or non-zero diffraction order term or interference term corresponding to each selected zero or non-zero diffraction order to be eliminated or obtained.
Abstract:
A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.
Abstract:
An apparatus includes (i) a bright light source for providing an illumination beam at multiple wavelengths selectable with a range from a deep ultraviolet wavelength to an infrared wavelength, (ii) illumination optics for directing the illumination beam towards a sample at selectable sets of angles of incidence (AOI's) or azimuth angles (AZ's) and polarization states to provide spectroscopic ellipsometry, wherein the illumination optics include an apodizer for controlling a spot size of the illumination beam on the sample at each of the selectable AOI/AZ sets, (iii) collection optics for directing an output beam from the sample in response to the illumination beam at each of the selectable AOI/AZ sets and polarization states towards a detector that generates an output signal or image based on the output beam, and (v) a controller for characterizing a feature of the sample based on the output signal or image.